Power Silicon BAS Hoja de datos

No.	parte #	Fabricante	Descripción
1	2N3792	Seme LAB	PNP SILICON EPITAXIAL BASE POWER TANSISTORS c reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibi
2	2N6246	ETC	SILICON PNP EPITAXIAL BASE HIGH POWER TRANSISTORS
3	BAS40A	Power Silicon	SURFACE MOUNT SCHOTTKY DIODES z FAST SWITCHING SPEED z HIGH CONDUCTOR z SURFACE MOUNT PACKAGE IDEALLY SUITED FOR AUTOMATIC INSERTION z ELECTRICAL IDENTICAL STANDARD JEDEC .121(3.10) .109(2.80) .0 4 5 (1. 1 5) .0 3 5 (0. 9 0) .0 2 3 (0. 6 0) .1 0 0 (2. 5 5) .0 8 8 (2. 2 5) .0 5
4	BAS40C	Power Silicon	SURFACE MOUNT SCHOTTKY DIODES z FAST SWITCHING SPEED z HIGH CONDUCTOR z SURFACE MOUNT PACKAGE IDEALLY SUITED FOR AUTOMATIC INSERTION z ELECTRICAL IDENTICAL STANDARD JEDEC .121(3.10) .109(2.80) .0 4 5 (1. 1 5) .0 3 5 (0. 9 0) .0 2 3 (0. 6 0) .1 0 0 (2. 5 5) .0 8 8 (2. 2 5) .0 5
5	2N6247	ETC	SILICON PNP EPITAXIAL BASE HIGH POWER TRANSISTORS
6	BAS40S	Power Silicon	SURFACE MOUNT SCHOTTKY DIODES z FAST SWITCHING SPEED z HIGH CONDUCTOR z SURFACE MOUNT PACKAGE IDEALLY SUITED FOR AUTOMATIC INSERTION z ELECTRICAL IDENTICAL STANDARD JEDEC .121(3.10) .109(2.80) .0 4 5 (1. 1 5) .0 3 5 (0. 9 0) .0 2 3 (0. 6 0) .1 0 0 (2. 5 5) .0 8 8 (2. 2 5) .0 5
7	BAS40	Power Silicon	SURFACE MOUNT SCHOTTKY DIODES z FAST SWITCHING SPEED z HIGH CONDUCTOR z SURFACE MOUNT PACKAGE IDEALLY SUITED FOR AUTOMATIC INSERTION z ELECTRICAL IDENTICAL STANDARD JEDEC .121(3.10) .109(2.80) .0 4 5 (1. 1 5) .0 3 5 (0. 9 0) .0 2 3 (0. 6 0) .1 0 0 (2. 5 5) .0 8 8 (2. 2 5) .0 5
8	BD242	Micro Electronics	PNP SILICON EPITAXIAL BASE POWER TRANSISTORS
9	BD242A	Micro Electronics	PNP SILICON EPITAXIAL BASE POWER TRANSISTORS
10	MMBT2222W	CHINA BASE	NPN Silicon Epitaxial Planar Medium Power Transistor
11	BUL47A	Seme LAB	ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR • Multi –base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range. • Ion implant and high accuracy masking for tight control of characteristics from batch to
12	BD948	Magna	(BD944 - BD948) Silicon Epitaxial Base Power Transistors
13	2N6248	ETC	SILICON PNP EPITAXIAL BASE HIGH POWER TRANSISTORS
14	2N6261	Seme LAB	HOMETAXIAL-BASE MEDIUM POWER SILICON NPN TRANSISTOR 0.71 (0.028) 0.86 (0.034) • fT = 800 kHz at 0.2A 11.94 (0.470) 12.70 (0.500) 24.33 (0.958) 24.43 (0.962) 14.48 (0.570) 14.99 (0.590) • Maximum Safe-area of operation curves for dc and pulse operation. • VCEV(sus) = 90V min • Low Saturation Voltag
15	2N6469	ETC	SILICON PNP EPITAXIAL BASE HIGH POWER TRANSISTORS
16	MMBT2222AW	CHINA BASE	NPN Silicon Epitaxial Planar Medium Power Transistor
17	BD944	Magna	(BD944 - BD948) Silicon Epitaxial Base Power Transistors
18	BD946	Magna	(BD944 - BD948) Silicon Epitaxial Base Power Transistors
19	BDV95	ETC	(BDV91 - BDV95) Silicon Epitaxial Base Power Transistors