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BUL47A |
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| Part Number | BUL47A |
| Manufacturer | Seme LAB |
| Description | BUL47A MECHANICAL DATA Dimensions in mm ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 25.15 (0.99) 26.67 (1.... |
| Features |
• Multi –base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range. • Ion implant and high accuracy masking for tight control of characteristics from batch to batch. • Triple Guard Rings for improved control of high voltages. TO3 (TO-204AA) Pin 1 – Base Pin 2 – Emitter Case is Collector ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCBO VCEO VEBO IC Ptot Tstg Rth Collector – Base Voltage Collector – Emitter Voltage (IB = 0) Emitter – Base Voltage (IC = 0) Continuous Collector Current ... |
| Document |
 BUL47A Data Sheet
PDF 46.77KB |
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