Power Innovations Limited BDW Hoja de datos

No.	parte #	Fabricante	Descripción
1	BDW23	Power Innovations Limited	NPN Transistor emperature at the rate of 0.4 W/°C. 2. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. V EBO IC IB Ptot Ptot Tj Tstg TA VCEO VCBO SYMBOL VALUE 45 60 80 100 45 60 80 100 5 6 0.2 50 2 -65 to +150 -65 to +150 -65 to +150 V A A W W
2	BDW73D	Power Innovations Limited	NPN SILICON POWER DARLINGTON erature range Operating free-air temperature range NOTES: 1. 2. 3. 4. V EBO IC IB Ptot Ptot ½LIC 2 Tj Tstg TA VCEO VCBO SYMBOL VALUE 45 60 80 100 120 45 60 80 100 120 5 8 0.3 80 2 75 -65 to +150 -65 to +150 -65 to +150 V A A W W mJ °C °C °C V V UNIT
3	BDW23A	Power Innovations Limited	NPN Transistor emperature at the rate of 0.4 W/°C. 2. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. V EBO IC IB Ptot Ptot Tj Tstg TA VCEO VCBO SYMBOL VALUE 45 60 80 100 45 60 80 100 5 6 0.2 50 2 -65 to +150 -65 to +150 -65 to +150 V A A W W
4	BDW53B	Power Innovations Limited	NPN Transistor mperature range Operating free-air temperature range NOTES: 1. 2. 3. 4. V EBO IC IB Ptot Ptot ½LIC 2 Tj Tstg TA VCEO VCBO SYMBOL VALUE 45 60 80 100 120 45 60 80 100 120 5 4 50 40 2 25 -65 to +150 -65 to +150 -65 to +150 V A mA W W mJ °C °C °C V V UNI
5	BDW63C	Power Innovations Limited	NPN Transistor rature range Operating free-air temperature range NOTES: 1. 2. 3. 4. VEB IC IB Ptot Ptot ½LIC 2 Tj Tstg TA VCEO VCBO SYMBOL VALUE 45 60 80 100 120 45 60 80 100 120 5 6 0.1 60 2 50 -65 to +150 -65 to +150 -65 to +150 V A A W W mJ °C °C °C V V UNIT Th
6	BDW64A	Power Innovations Limited	PNP SILICON POWER DARLINGTONS erature range Operating free-air temperature range NOTES: 1. 2. 3. 4. V EBO IC IB Ptot Ptot ½LIC 2 Tj Tstg TA VCEO VCBO SYMBOL VALUE -45 -60 -80 -100 -120 -45 -60 -80 -100 -120 -5 -6 -0.1 60 2 50 -65 to +150 -65 to +150 -65 to +150 V A A W W mJ °C °C
7	BDW53A	Power Innovations Limited	NPN Transistor mperature range Operating free-air temperature range NOTES: 1. 2. 3. 4. V EBO IC IB Ptot Ptot ½LIC 2 Tj Tstg TA VCEO VCBO SYMBOL VALUE 45 60 80 100 120 45 60 80 100 120 5 4 50 40 2 25 -65 to +150 -65 to +150 -65 to +150 V A mA W W mJ °C °C °C V V UNI
8	BDW53C	Power Innovations Limited	NPN Transistor mperature range Operating free-air temperature range NOTES: 1. 2. 3. 4. V EBO IC IB Ptot Ptot ½LIC 2 Tj Tstg TA VCEO VCBO SYMBOL VALUE 45 60 80 100 120 45 60 80 100 120 5 4 50 40 2 25 -65 to +150 -65 to +150 -65 to +150 V A mA W W mJ °C °C °C V V UNI
9	BDW54B	Power Innovations Limited	PNP SILICON POWER DARLINGTONS mperature range Operating free-air temperature range NOTES: 1. 2. 3. 4. V EBO IC IB Ptot Ptot ½LIC 2 Tj Tstg TA VCEO VCBO SYMBOL VALUE -45 -60 -80 -100 -120 -45 -60 -80 -100 -120 -5 -4 -50 40 2 25 -65 to +150 -65 to +150 -65 to +150 V A mA W W mJ °C
10	BDW54C	Power Innovations Limited	PNP SILICON POWER DARLINGTONS mperature range Operating free-air temperature range NOTES: 1. 2. 3. 4. V EBO IC IB Ptot Ptot ½LIC 2 Tj Tstg TA VCEO VCBO SYMBOL VALUE -45 -60 -80 -100 -120 -45 -60 -80 -100 -120 -5 -4 -50 40 2 25 -65 to +150 -65 to +150 -65 to +150 V A mA W W mJ °C
11	BDW63	Power Innovations Limited	NPN Transistor rature range Operating free-air temperature range NOTES: 1. 2. 3. 4. VEB IC IB Ptot Ptot ½LIC 2 Tj Tstg TA VCEO VCBO SYMBOL VALUE 45 60 80 100 120 45 60 80 100 120 5 6 0.1 60 2 50 -65 to +150 -65 to +150 -65 to +150 V A A W W mJ °C °C °C V V UNIT Th
12	BDW73A	Power Innovations Limited	NPN SILICON POWER DARLINGTON erature range Operating free-air temperature range NOTES: 1. 2. 3. 4. V EBO IC IB Ptot Ptot ½LIC 2 Tj Tstg TA VCEO VCBO SYMBOL VALUE 45 60 80 100 120 45 60 80 100 120 5 8 0.3 80 2 75 -65 to +150 -65 to +150 -65 to +150 V A A W W mJ °C °C °C V V UNIT
13	BDW74D	Power Innovations Limited	PNP SILICON POWER DARLINGTONS erature range Operating free-air temperature range NOTES: 1. 2. 3. 4. V EBO IC IB Ptot Ptot ½LIC 2 Tj Tstg TA VCEO VCBO SYMBOL VALUE -45 -60 -80 -100 -120 -45 -60 -80 -100 -120 -5 -8 -0.3 80 2 75 -65 to +150 -65 to +150 -65 to +150 V A A W W mJ °C °C
14	BDW23B	Power Innovations Limited	NPN Transistor emperature at the rate of 0.4 W/°C. 2. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. V EBO IC IB Ptot Ptot Tj Tstg TA VCEO VCBO SYMBOL VALUE 45 60 80 100 45 60 80 100 5 6 0.2 50 2 -65 to +150 -65 to +150 -65 to +150 V A A W W
15	BDW23C	Power Innovations Limited	NPN Transistor emperature at the rate of 0.4 W/°C. 2. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. V EBO IC IB Ptot Ptot Tj Tstg TA VCEO VCBO SYMBOL VALUE 45 60 80 100 45 60 80 100 5 6 0.2 50 2 -65 to +150 -65 to +150 -65 to +150 V A A W W
16	BDW53	Power Innovations Limited	NPN Transistor mperature range Operating free-air temperature range NOTES: 1. 2. 3. 4. V EBO IC IB Ptot Ptot ½LIC 2 Tj Tstg TA VCEO VCBO SYMBOL VALUE 45 60 80 100 120 45 60 80 100 120 5 4 50 40 2 25 -65 to +150 -65 to +150 -65 to +150 V A mA W W mJ °C °C °C V V UNI
17	BDW53D	Power Innovations Limited	NPN Transistor mperature range Operating free-air temperature range NOTES: 1. 2. 3. 4. V EBO IC IB Ptot Ptot ½LIC 2 Tj Tstg TA VCEO VCBO SYMBOL VALUE 45 60 80 100 120 45 60 80 100 120 5 4 50 40 2 25 -65 to +150 -65 to +150 -65 to +150 V A mA W W mJ °C °C °C V V UNI
18	BDW54	Power Innovations Limited	PNP SILICON POWER DARLINGTONS mperature range Operating free-air temperature range NOTES: 1. 2. 3. 4. V EBO IC IB Ptot Ptot ½LIC 2 Tj Tstg TA VCEO VCBO SYMBOL VALUE -45 -60 -80 -100 -120 -45 -60 -80 -100 -120 -5 -4 -50 40 2 25 -65 to +150 -65 to +150 -65 to +150 V A mA W W mJ °C
19	BDW54A	Power Innovations Limited	PNP SILICON POWER DARLINGTONS mperature range Operating free-air temperature range NOTES: 1. 2. 3. 4. V EBO IC IB Ptot Ptot ½LIC 2 Tj Tstg TA VCEO VCBO SYMBOL VALUE -45 -60 -80 -100 -120 -45 -60 -80 -100 -120 -5 -4 -50 40 2 25 -65 to +150 -65 to +150 -65 to +150 V A mA W W mJ °C
20	BDW54D	Power Innovations Limited	PNP SILICON POWER DARLINGTONS mperature range Operating free-air temperature range NOTES: 1. 2. 3. 4. V EBO IC IB Ptot Ptot ½LIC 2 Tj Tstg TA VCEO VCBO SYMBOL VALUE -45 -60 -80 -100 -120 -45 -60 -80 -100 -120 -5 -4 -50 40 2 25 -65 to +150 -65 to +150 -65 to +150 V A mA W W mJ °C