BDW54D |
Part Number | BDW54D |
Manufacturer | Power Innovations Limited |
Description | BDW54, BDW54A, BDW54B, BDW54C, BDW54D PNP SILICON POWER DARLINGTONS Copyright © 1997, Power Innovations Limited, UK AUGUST 1978 - REVISED MARCH 1997 q Designed for Complementary Use with BDW53, BDW5... |
Features |
mperature range Operating free-air temperature range NOTES: 1. 2. 3. 4. V EBO IC IB Ptot Ptot ½LIC 2 Tj Tstg TA VCEO VCBO SYMBOL VALUE -45 -60 -80 -100 -120 -45 -60 -80 -100 -120 -5 -4 -50 40 2 25 -65 to +150 -65 to +150 -65 to +150 V A mA W W mJ °C °C °C V V UNIT
These values apply when the base-emitter diode is open circuited. Derate linearly to 150°C case temperature at the rate of 0.32 W/°C. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = -5 mA, RBE = 100 ... |
Document |
BDW54D Data Sheet
PDF 163.58KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | BDW54 |
Power Innovations Limited |
PNP SILICON POWER DARLINGTONS | |
2 | BDW54 |
INCHANGE |
PNP Transistor | |
3 | BDW54A |
Power Innovations Limited |
PNP SILICON POWER DARLINGTONS | |
4 | BDW54B |
Power Innovations Limited |
PNP SILICON POWER DARLINGTONS | |
5 | BDW54C |
Power Innovations Limited |
PNP SILICON POWER DARLINGTONS | |
6 | BDW51 |
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NPN Transistor |