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| Part Number | BDW54 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | BDW54 |
| Manufacturer | INCHANGE |
| Title | PNP Transistor |
| Description | ·High DC Current Gain : hFE= 750(Min.)@ IC= -1.5A, VCE= -3V ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO = -45V(Min) ·Low Collector Saturation Voltage ·Complement to Type BDW53 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for ge. |
| Features | ww.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor BDW54 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA, IB= 0 -45 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -1.5A ,IB= -30mA -2.5 V VCE(s. |
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| 5 | BDW51B |
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| 7 | BDW51C |
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| 8 | BDW51C |
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| 9 | BDW52 |
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| 10 | BDW52 |
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Desde 2024. D4U Semiconductor.
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