Polyfet RF Devices SM7 Hoja de datos

No.	parte #	Fabricante	Descripción
1	SM703	Polyfet RF Devices	SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 80.0 Watts Single Ended Package Style AM HIGH EFFICIENCY, LINEAR HIGH GA
2	SM704	Polyfet RF Devices	SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 125.0 Watts Single Ended Package Style AM HIGH EFFICIENCY, LINEAR HIGH G
3	SM724	Polyfet RF Devices	SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 60.0 Watts Single Ended Package Style AM HIGH EFFICIENCY, LINEAR HIGH GA
4	SM705	Polyfet RF Devices	SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 150.0 Watts Single Ended Package Style AM HIGH EFFICIENCY, LINEAR HIGH G
5	SM706	Polyfet RF Devices	SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 135.0 Watts Single Ended Package Style AM HIGH EFFICIENCY, LINEAR HIGH G
6	SM724	Polyfet RF Devices	SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 60.0 Watts Single Ended Package Style AM HIGH EFFICIENCY, LINEAR HIGH GA
7	SM746	Polyfet RF Devices	SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 175.0 Watts Single Ended Package Style AM HIGH EFFICIENCY, LINEAR HIGH G