SM724 |
Part Number | SM724 |
Manufacturer | Polyfet RF Devices |
Description | Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver an... |
Features |
low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency.
TM
SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 60.0 Watts Single Ended Package Style AM HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE
o
ABSOLUTE MAXIMUM RATINGS ( T = 25 C )
Total Device Dissipation 190 Watts Junction to Case Thermal Resistance o 0.85 C/W Maximum Junction Temperature o 200 C Storage Temperature o o -65 C to 150 C DC Drain Current Drain to Gate Voltage 50 V Drain to Source Voltage 50 V Gate to Source Voltage 20 V
19.0 A
RF CHARACTERISTICS (
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Document |
SM724 Data Sheet
PDF 92.66KB |
Similar Datasheet
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