| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Polyfet RF Devices |
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 6.0 Watts Single Ended Package Style SO8 -1 HIGH EFFICIENCY, LINEAR HIGH |
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Desde 2024. D4U Semiconductor.
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