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L225 |
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| Part Number | L225 |
| Manufacturer | Polyfet RF Devices |
| Description | Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver an... |
| Features |
low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency.
TM
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 6.0 Watts Single Ended Package Style SO8 -1 HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE
o
ABSOLUTE MAXIMUM RATINGS ( T = 25 C )
Total Device Dissipation 50 Watts Junction to Case Thermal Resistance o 3.40 C/W Maximum Junction Temperature o 200 C Storage Temperature o o -65 C to 150 C DC Drain Current Drain to Gate Voltage 36 V Drain to Source Voltage 36 V Gate to Source Voltage 20 V
5.0 A
RF CHARACTERISTICS (
SYMBO... |
| Document |
 L225 Data Sheet
PDF 38.33KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | L220 |
Heraeus Sensor Technology |
Platinum Resistance Temperature Detector |
|
| 2 | L2204 |
Hamamatsu Corporation |
4-pin plastic package/ infrared LED |
|
| 3 | L220P |
Heraeus Sensor Technology |
Platinum Resistance Temperature Detector |
|
| 4 | L2263 |
LIZE |
Current Mode PWM Controller |
|
| 5 | L2264 |
LIZE |
Current Mode PWM Controller |
|
| 6 | L2269 |
LIZE |
Current Mode PWM Controller |
|
Desde 2024. D4U Semiconductor.
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