| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Philips |
VHF power transistor • multi-base structure and emitter-ballasting resistors for an optimum temperature profile • gold metallization ensures excellent reliability • internal matching to achieve an optimum wideband capability and high power gain The transistor has a 6-lea |
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Philips |
VHF power transistor • multi-base structure and emitter-ballasting resistors for an optimum temperature profile • gold metallization ensures excellent reliability • internal matching to achieve an optimum wideband capability and high power gain The transistor has a 6-lea |
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|
Philips |
VHF power transistor • multi-base structure and emitter-ballasting resistors for an optimum temperature profile • gold metallization ensures excellent reliability • internal matching to achieve an optimum wideband capability and high power gain The transistor has a 6-lea |
|
|
|
|
Philips |
VHF power transistor • multi-base structure and emitter-ballasting resistors for an optimum temperature profile • gold metallization ensures excellent reliability • internal matching to achieve an optimum wideband capability and high power gain The transistor has a 6-lea |
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Philips |
UHF power transistor BLV91/SL • diffused emitter-ballasting resistors for an optimum temperature profile. • gold metallization ensures excellent reliability. • the device can be applied at rated load power, without an external heatsink, when it is mounted on a printed- |
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Philips |
UHF power transistor BLV91/SL • diffused emitter-ballasting resistors for an optimum temperature profile. • gold metallization ensures excellent reliability. • the device can be applied at rated load power, without an external heatsink, when it is mounted on a printed- |
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Desde 2024. D4U Semiconductor.
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