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BLV75-12 |
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| Part Number | BLV75-12 |
| Manufacturer | Philips |
| Description | N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the 175 MHz commmunications band. FEATURES • multi-base structure and emitter-ballasting resistors ... |
| Features |
• multi-base structure and emitter-ballasting resistors for an optimum temperature profile • gold metallization ensures excellent reliability • internal matching to achieve an optimum wideband capability and high power gain The transistor has a 6-lead flange envelope with a ceramic cap (SOT-119). All leads are isolated from the flange. QUICK REFERENCE DATA R.F. performance up to Th = 25 °C in a common-emitter class-B circuit MODE OF OPERATION narrow band; c.w. PIN CONFIGURATION VCE V 12,5 f MHz 175 PL W 75 PINNING PIN 1 handbook, halfpage BLV75/12 Gp dB > 6,5 ηC % > 55 DESCRIPTION emitter ... |
| Document |
 BLV75-12 Data Sheet
PDF 88.28KB |
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