| No. | parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
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Philips |
Tube |
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Philips |
NPN microwave power transistors • Interdigitated structure provides high emitter efficiency • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Gold metallization realizes very stable characteristics and excellent lifetime • Mu |
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Philips |
IF Limiting Amplifier / FM Detector and Audio Amplifier |
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Philips |
NPN microwave power transistors • Interdigitated structure provides high emitter efficiency • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Gold metallization realizes very stable characteristics and excellent lifetime • Mu |
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Desde 2024. D4U Semiconductor.
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