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MZ0912B100Y |
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| Part Number | MZ0912B100Y |
| Manufacturer | Philips |
| Description | NPN silicon planar epitaxial microwave power transistors. The MX0912B100Y has a SOT439A metal ceramic flange package and improved output prematching cells. It is recommended for new designs. The MZ091... |
| Features |
• Interdigitated structure provides high emitter efficiency • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Gold metallization realizes very stable characteristics and excellent lifetime • Multicell geometry improves power sharing and low thermal resistance • Input and output matching cell allows an easier design of circuits. APPLICATIONS • Common base class-C broadband pulse power amplifiers operating at 960 to 1215 MHz for TACAN application. DESCRIPTION NPN silicon planar epitaxial microwave power transistors. The MX0912B100Y has a S... |
| Document |
 MZ0912B100Y Data Sheet
PDF 98.88KB |
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