No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Panasonic Semiconductor |
Silicon NPN epitaxial planer transistor 1 Composite Transistors PT — Ta 500 XN1212 Total power dissipation PT (mW) 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (˚C) IC — VCE 160 VCE(sat) — IC 100 hFE — IC IC/IB=10 400 VCE=10V Ta=25˚C 140 IB=1.0mA 0.9mA 0.8mA Coll |
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Panasonic Semiconductor |
Silicon PNP epitaxial planer transistor 1 Composite Transistors PT — Ta 500 XN111H Total power dissipation PT (mW) 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (˚C) IC — VCE –120 –100 VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C IC/IB=1 |
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Panasonic Semiconductor |
Silicon NPN epitaxial planer transistor 1 Composite Transistors PT — Ta 500 XN1215 Total power dissipation PT (mW) 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (˚C) IC — VCE 160 100 VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) IC/IB=10 hFE — I |
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Panasonic Semiconductor |
Silicon PNP epitaxial planer transistor 1 Composite Transistors PT — Ta 500 XN1110 Total power dissipation PT (mW) 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (˚C) IC — VCE –120 –100 VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) IC/IB=10 400 h |
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Panasonic Semiconductor |
Silicon PNP epitaxial planer transistor 1 Composite Transistors PT — Ta 500 XN1111 Total power dissipation PT (mW) 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (˚C) IC — VCE –160 –140 IB= –1.0mA Ta=25˚C –100 VCE(sat) — IC Collector to emitter saturation voltage VCE(s |
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Panasonic Semiconductor |
Silicon PNP epitaxial planer transistor 1 Composite Transistors PT — Ta 500 XN1112 Total power dissipation PT (mW) 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (˚C) IC — VCE –160 –140 Ta=25˚C IB= –1.0mA –0.9mA –0.8mA –0.7mA –0.6mA –0.5mA –80 –60 –40 –20 0 0 –2 –4 –6 – |
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Panasonic Semiconductor |
Silicon PNP epitaxial planer transistor 1 Composite Transistors PT — Ta 500 XN1113 Total power dissipation PT (mW) 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (˚C) IC — VCE –160 IB= –1.0mA –140 VCE(sat) — IC –100 hFE — IC IC/IB=10 400 VCE= –10V Ta=25˚C Collector |
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Panasonic Semiconductor |
Silicon PNP epitaxial planer transistor 1 Composite Transistors PT — Ta 500 XN1114 Total power dissipation PT (mW) 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (˚C) IC — VCE –160 –100 VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C IC/IB=1 |
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Panasonic Semiconductor |
Silicon PNP epitaxial planer transistor 1 Composite Transistors PT — Ta 500 XN1115 Total power dissipation PT (mW) 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (˚C) IC — VCE –160 –100 VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C IC/IB=1 |
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Panasonic Semiconductor |
Silicon PNP epitaxial planer transistor 1 Composite Transistors PT — Ta 500 XN1116 Total power dissipation PT (mW) 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (˚C) IC — VCE –160 VCE(sat) — IC –100 hFE — IC IC/IB=10 400 VCE= –10V Collector current IC (mA) –0.9mA |
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Panasonic Semiconductor |
Silicon PNP epitaxial planer transistor 1 Composite Transistors PT — Ta 500 XN1117 Total power dissipation PT (mW) 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (˚C) IC — VCE –120 –100 VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C IC/IB=1 |
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Panasonic Semiconductor |
Silicon PNP epitaxial planer transistor 1 Composite Transistors PT — Ta 500 XN1118 Total power dissipation PT (mW) 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (˚C) IC — VCE –240 VCE(sat) — IC –100 hFE — IC IC/IB=10 160 VCE= –10V Collector to emitter saturation vo |
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Panasonic Semiconductor |
Silicon PNP epitaxial planer transistor 1 Composite Transistors PT — Ta 500 XN1119 Total power dissipation PT (mW) 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (˚C) IC — VCE –240 –100 VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C IC/IB=1 |
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Panasonic Semiconductor |
Silicon PNP epitaxial planer transistor 1 Composite Transistors PT — Ta 500 XN111F Total power dissipation PT (mW) 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (˚C) IC — VCE –240 –100 VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C IC/IB=1 |
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Panasonic Semiconductor |
PNP epitaxial planer transistor 1 Composite Transistors PT — Ta 500 XN111M Total power dissipation PT (mW) 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (˚C) IC — VCE 240 –10 VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C IC/IB=10 |
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Panasonic Semiconductor |
Silicon NPN epitaxial planer transistor 1 Composite Transistors PT — Ta 500 XN1211 Total power dissipation PT (mW) 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (˚C) IC — VCE 160 100 VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C IC/IB=10 |
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Panasonic Semiconductor |
Silicon NPN epitaxial planer transistor 1 Composite Transistors PT — Ta 500 XN1213 Total power dissipation PT (mW) 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (˚C) IC — VCE 160 100 VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) IC/IB=10 400 Ta=2 |
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Panasonic Semiconductor |
Silicon NPN epitaxial planer transistor 1 Composite Transistors PT — Ta 500 XN1214 Total power dissipation PT (mW) 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (˚C) IC — VCE 160 100 VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C IC/IB=10 |
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Panasonic Semiconductor |
Silicon NPN epitaxial planer transistor 1 Composite Transistors PT — Ta 500 XN1216 Total power dissipation PT (mW) 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (˚C) IC — VCE 160 VCE(sat) — IC 100 hFE — IC IC/IB=10 400 VCE=10V Ta=25˚C 140 IB=1.0mA Collector to emi |
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Panasonic Semiconductor |
Composite Transistors • Two elements incorporated into one package (Transistors with built-in resistor) • Reduction of the mounting area and assembly cost by one half 3 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 4 5 0.16+0.10 –0.06 1.50+0.25 –0.05 2.8+0.2 –0.3 2 0.30+0.10 |
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