XN111H |
Part Number | XN111H |
Manufacturer | Panasonic Semiconductor |
Description | Composite Transistors XN111H Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits 2.8 -0.3 0.65±0.15 +0.2 +0.25 1.5 -0.05 5 0.65±0.15 1 0.95 2.9 -0.05 q q Two eleme... |
Features |
1
Composite Transistors
PT — Ta
500
XN111H
Total power dissipation PT (mW)
400
300
200
100
0 0 40 80 120 160
Ambient temperature Ta (˚C)
IC — VCE
–120 –100 VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C IC/IB=10 hFE — IC 240 VCE= –10V –100 Forward current transfer ratio hFE 200 Collector current IC (mA) –10 –80 IB= –0.5mA –0.4mA 160 Ta=75˚C 120 25˚C 80 –25˚C 40 –60 –0.3mA –40 –0.2mA –20 –0.1mA 0 0 –2 –4 –6 –8 –10 –12 –1 Ta=75˚C 25˚C –0.1 –25˚C –0.01 –1 –3 –10 –30 –100 –300 –1000 0 –0.1 –0.3 –1 –3 –10 –30 –100 Collector to emitter vol... |
Document |
XN111H Data Sheet
PDF 32.52KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | XN1110 |
Panasonic Semiconductor |
Silicon PNP epitaxial planer transistor | |
2 | XN1111 |
Panasonic Semiconductor |
Silicon PNP epitaxial planer transistor | |
3 | XN1112 |
Panasonic Semiconductor |
Silicon PNP epitaxial planer transistor | |
4 | XN1113 |
Panasonic Semiconductor |
Silicon PNP epitaxial planer transistor | |
5 | XN1114 |
Panasonic Semiconductor |
Silicon PNP epitaxial planer transistor | |
6 | XN1115 |
Panasonic Semiconductor |
Silicon PNP epitaxial planer transistor |