| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Panasonic Semiconductor |
Transistor • Compatible between high breakdown voltage and high cut-off frequency • Low noise, high-gain amplification • Optimal size reduction and high level integration for ultra-small packages 3 2 1 1.00±0.05 0.39+0.01 −0.03 0.15±0.05 0.05±0.03 0.35±0.01 |
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Panasonic Semiconductor |
Transistor • Compatible between high breakdown voltage and high cutoff frequency • Low-noise, high-gain amplification • Suitable for high-density mounting and downsizing of the equipment for Ultraminiature leadless package 0.6 mm × 1.0 mm (height 0.39 mm) Unit: |
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Panasonic Semiconductor |
SiGe HBT type • Compatible between high breakdown voltage and high cut-off frequency • Low noise, high-gain amplification • Two elements incorporated into one package (Each transistor is separated) • Reduction of the mounting area and assembly cost by one half 0.1 |
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Panasonic Semiconductor |
Transistor • Compatible between high breakdown voltage and high cut-off frequency • Low noise, high-gain amplification • Two elements incorporated into one package (Each transistor is separated) • Reduction of the mounting area and assembly cost by one half 0.1 |
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Panasonic Semiconductor |
Transistor • Compatible between high breakdown voltage and high cutoff frequency • Low-noise, high-gain amplification • Suitable for high-density mounting and downsizing of the equipment for Ultraminiature package 0.8 mm × 1.2 mm (height 0.52 mm) 3 0.15 min. 0 |
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Desde 2024. D4U Semiconductor.
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