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MSG43001 |
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| Part Number | MSG43001 |
| Manufacturer | Panasonic Semiconductor |
| Description | Transistors MSG43001 SiGe HBT type For low-noise RF amplifier ■ Features • Compatible between high breakdown voltage and high cutoff frequency • Low-noise, high-gain amplification • Suitable for high... |
| Features |
• Compatible between high breakdown voltage and high cutoff frequency • Low-noise, high-gain amplification • Suitable for high-density mounting and downsizing of the equipment for Ultraminiature leadless package 0.6 mm × 1.0 mm (height 0.39 mm) Unit: mm 1 1.00±0.05 0.60±0.05 3 2 0.39+0.01 −0.03 0.15±0.05 0.05±0.03 0.35±0.01 0.25±0.05 0.50±0.05 0.25±0.05 1 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Collector power dissipation* Junction temperature Stora... |
| Document |
 MSG43001 Data Sheet
PDF 94.77KB |
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