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Panasonic Semiconductor |
Silicon NPN Transistor q q q s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO |
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Panasonic Semiconductor |
Si NPN Transistor |
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Panasonic Semiconductor |
Si NPN Transistor |
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Panasonic Semiconductor |
Silicon NPN Transistor q q q q q Unit: mm 2.4±0.2 2.0±0.2 3.5±0.1 High collector to base voltage VCBO. High collector to emitter voltage VCEO. Large collector power dissipation PC. Low collector to emitter saturation voltage VCE(sat). M type package allowing easy automa |
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Panasonic Semiconductor |
Silicon NPN Transistor q q q q q Unit: mm 2.4±0.2 2.0±0.2 3.5±0.1 High collector to base voltage VCBO. High collector to emitter voltage VCEO. Large collector power dissipation PC. Low collector to emitter saturation voltage VCE(sat). M type package allowing easy automa |
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Panasonic Semiconductor |
2SD1318 |
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Panasonic Semiconductor |
2SD1304 q Zener diode built in. q Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. s Absolute Maximum Ratings (Ta=25˚C) Parameter Collector to base voltage Collector to emitt |
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Panasonic Semiconductor |
NPN Transistor L YB 1Ω G 100 µA 2 mA 35 V 10000 2.5 V 2.5 V 20 MHz 0.4 µs 3 µs 1 µs mJ C E 1 PC (W) IC (A) VCE(sat) (V) VBE(sat) (V) PC — Ta 40 (1)TC=Ta (2)With a 50×50×2mm Al heat sink (3)Without heat sink 30 (1) (PC=1.3W) 20 10 (2) (3) 0 0 20 40 60 80 100 1 |
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Panasonic Semiconductor |
Silicon NPN Transistor 0.95 q q q Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature VCBO VCEO VEBO ICP IC PC Tj Tstg 25 20 12 1 0. |
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Panasonic Semiconductor |
Silicon NPN Transistor 7 Unit nA V V V 25 20 12 200 60 0.13 0.4 1.2 200 10 1.0 *2 800 V V MHz pF Ω Pulse measurement FE1 Rank classification R 200 ~ 350 S 300 ~ 500 T 400 ~ 800 Measurement circuit 1kΩ Rank hFE1 IB=1mA f=1kHz V=0.3V VB VV VA Ron= VB !1000(Ω) |
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Panasonic Semiconductor |
Silicon NPN Transistor q q q q q 1.5 0.4 1.5 R0.9 R0.9 High collector to base voltage VCBO. High collector to emitter voltage VCEO. Large collector power dissipation PC. Low collector to emitter saturation voltage VCE(sat). M type package allowing easy automatic and man |
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Panasonic Semiconductor |
Silicon NPN Transistor q Zener diode built in. q Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. s Absolute Maximum Ratings (Ta=25˚C) Parameter Collector to base voltage Collector to emitt |
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Panasonic Semiconductor |
NPN Transistor L YB 1Ω G 100 µA 2 mA 35 V 10000 2.5 V 2.5 V 20 MHz 0.4 µs 3 µs 1 µs mJ C E 1 PC (W) IC (A) VCE(sat) (V) VBE(sat) (V) PC — Ta 40 (1)TC=Ta (2)With a 50×50×2mm Al heat sink (3)Without heat sink 30 (1) (PC=1.3W) 20 10 (2) (3) 0 0 20 40 60 80 100 1 |
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Desde 2024. D4U Semiconductor.
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