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2SD1350A Panasonic Semiconductor Silicon NPN Transistor Datasheet


Panasonic Semiconductor
2SD1350A
Part Number 2SD1350A
Manufacturer Panasonic Semiconductor
Description Transistor 2SD1350, 2SD1350A Silicon NPN triple diffusion planer type For high breakdown voltage switching s Features q q q q q Unit: mm 2.4±0.2 2.0±0.2 3.5±0.1 High collector to base voltage VCBO. High collector to emitter voltage VCEO. Large collector power dissipation PC. Low collector to em...
Features q q q q q Unit: mm 2.4±0.2 2.0±0.2 3.5±0.1 High collector to base voltage VCBO. High collector to emitter voltage VCEO. Large collector power dissipation PC. Low collector to emitter saturation voltage VCE(sat). M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. (Ta=25˚C) Ratings 400 600 400 500 5 1 500 1 150
  –55 ~ +150 1cm2 Unit V 6.9±0.1 1.5 0.4 2.5±0.1 1.0 1.0 1.5 R0.9 R0.9 1.0±0.1 0.85 Parameter Collector to base voltage Collector to 2SD1350 2SD1350A 2SD1350 Symbol VCBO VCEO VEBO ICP IC PC* Tj Tstg 0.55±0.1 1.2...

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Part Number Description
2SD1350
manufacturer
Panasonic Semiconductor
Silicon NPN Transistor
Transistor 2SD1350, 2SD1350A Silicon NPN triple diffusion planer type For high breakdown voltage switching s Features q q q q q Unit: mm 2.4±0.2 2.0±0.2 3.5±0.1 High collector to base voltage VCBO. High collector to emitter voltage VCEO. Large collector power dissipation PC. Low collector to emitter saturation voltage VCE(sat). M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. (Ta=25˚C) Ratings 400 600 400 500 5 1 500 1 150 –55 ~ +150 1cm2 Unit V 6.9±0.1 1.5 0.4 2.5±0.1 1.0 1.0 1.5 R0.9 R0.9 1.0±0.1 0.85 Parameter Collector to base voltage Collector to 2SD1350 2SD1350A 2SD1350 Symbol VCBO VCEO VEBO ICP IC PC* T...
2SD1351
manufacturer
Inchange Semiconductor
Silicon NPN Power Transistors
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Collector Power Dissipation- : PC= 30W@ TC= 25℃ ·Low Collector Saturation Voltage- : VCE(sat)= 1.0V(Max)@ (IC= 2A, IB= 0.2A) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 3 A IB Base Current-Continuous Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 0.5 A 2 W 30 150 ℃ T...
2SD1351
manufacturer
Thinki Semiconductor
NPN Complementary Silicon Power Transistors
2SD1351 ® 2SD1351 Pb Pb Free Plating Product NPN Complementary Silicon Power Transistors FEATURES z Complements the 2SB988. z Wide Safe Operationg Area. z Fast Switching Speed. z Wide ASO. APPLICATIONS z Power Amplifier Applications. z Vertical Output Applications. z Switching Applications. TO-220C COLLECTOR 2 BASE 1 3 EMITTER 1. BASE 2. COLLECTOR 3. EMITTER 23 1 ABSOLUTE MAXIMUM RATINGS ( Ta = 25 OC) Parameter l Value Unit Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Total Dissipation at Max. Operating Junction Temperature Storage Temperature VCEO VEBO IC IB Ptot Tj Tstg 60 V 7V 3.0 A 0.5 A 30 W 150 oC -55~...
2SD1352
manufacturer
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NPN Transistor
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80(Min) ·Good Linearity of hFE ·Complement to Type 2SB989 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A IE Emitter Current-Continuous 4 A IB Base Current-Continuous 0.4 A PC Collector Power Dissipation@ TC=25℃ 30 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD1352 isc website:www.iscsemi.com...
2SD1353
manufacturer
Toshiba
Silicon NPN Transistor
SILICON NPN TRIPLE DIFFUSED TYPE 2SD1353 AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. FEATURES . High DC Current Gain of 200 to 1200 at V CE=5V, Ic=0.5A . Low VcE(sat) of 1 . 0V (Max.) at Ic=lA, Ib=0.02A . Collector Power Dissipation of 30W at Tc=25°C Unit in mm 0z.z±az MAXIMUM RATINGS (Ta=25 c) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VcBO 50 Collector-Emitter Voltage VcEO 50 Emitter-Base Voltage VEBO Collector Current ic Base Current Collector Power Dissipation Ta=25°C Tc=25 C IB 0.5 1.5 30 1. BASE 2. COLLECTOR (HEAT SINK) 3. EMITTER Junction Temperature 150 Storage Temperature Range Tstg -55~150 TOSHIBA 2-10K1A ELECTRICAL CHARACTERISTICS (Ta=25...
2SD1354
manufacturer
Toshiba
Silicon NPN Transistor
SILICON NPN TRIPLE DIFFUSED TYPE 2SD1354 AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. FEATURES . High DC Current Gain : hFE=300(Max. ) (VcE=5V, Ic=0.5A) . Low Saturation Voltage : VC E(sat)=l-0V(Max.)(I C=3A, I B=0.3A) . High Power Dissipation : P C=30W (Tc=25 P C) . Complementary to 2SB994 Unit in mm 03.2±O.2 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VcBO 60 Collector-Emitter Voltage VCEO 60 Emitter-Base Voltage VEBO Collector Current ic Base Current IB 0.5 Collector Power Ta=25 C 1.5 Dissipation Tc=25 C 30 1. BASE 2. COLLECTOR (HEAT SINK) 3. EMITTER Junction Temperature 150 Storage Temperature Range L stg -55-150 TOSH...
2SD1355
manufacturer
Toshiba
Silicon NPN Transistor
: SILICON NPN TRIPLE DIFFUSED TYPE ) POWER AMPLIFIER APPLICATIONS. Unit in mm FEATURES . High Breakdown Voltage : VCEO=100V . Low Collector Saturation Voltage : Vqj? (sat)=2.0Vttlax. . Complementary to 2SB995 . Recommended for 30W High Fidelity Audicd Frequency Amplifier Output Stage. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range SYMBOL VcBO VcEO VeBO ic IB PC T J T stg RATING 100 100 5 5 0.5 40 UNIT V V V A A W 150 -55^150 °C °C 10/3 MAX 7.0 03.2 i 0.2 ~g" r~* / '1 *
2SD1355
manufacturer
INCHANGE
NPN Transistor
·Low Collector Saturation Voltage : VCE(sat)= 2.0V(Max)@ IC= 4A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V (Min) ·Complement to Type 2SB995 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications. ·Recommended for 30W high-fidelity audio frequency amplifier output stage. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.5 A 40 W 150 ℃ Tstg ...
2SD1356
manufacturer
Toshiba
Silicon NPN Transistor
: SILICON NPN TRIPLE DIFFUSED TYPE 2SD1356 POWER AMPLIFIER APPLICATIONS. FEATURES . High Power Dissipation : P C=30W (Tc=25°C) . Good Linearity of hEE . Complementary to 2SB996 . Recommended for 20 — 25W High Fidelity Audio Frequency Amplifier Output Stage. Unit in mm 0&2±a2 MAXIMUM RATINGS (Ta=25 C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range SYMBOL v CBO VCEO v EBO ic IB PC T j T stg RATING 80 80 5 4 0.4 UNIT V V V A A 30 W 150 -55-150 °C °C 1. BASE 2. collector Cheat sink) 3. EMITTER TOSHIBA Weight : 2.1 2-10K.1A ELECTRI...




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