| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Panasonic Semiconductor |
2SB976 q q s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VE |
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Panasonic Semiconductor |
2SB1148 q Low collector to emitter saturation voltage VCE(sat) q High-speed switching q I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. s Absolute Maximum Ratings (TC=25˚C) Par |
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Panasonic Semiconductor |
2SB788 q High collector to emitter voltage VCEO. q Low noise voltage NV. q M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. s Absolute Maximum Ratings (Ta=25˚C) Parameter Collector to |
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Panasonic Semiconductor |
Silicon PNP triple diffusion planar type Transistor • High collector-base voltage (Emitter open) VCBO • High collector-emitter voltage (Base open) VCEO • Large collector power dissipation PC • Low collector-emitter saturation voltage VCE(sat) φ 3.16±0.1 3.8±0.3 11.0±0.5 1.9±0.1 ■ Absolute Maximum |
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Panasonic Semiconductor |
2SB949 16.7±0.3 7.5±0.2 q High foward current transfer ratio hFE q High-speed switching q Full-pack package which can be installed to the heat sink with one screw s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Unit Collector to 2SB949 |
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Panasonic Semiconductor |
2SB1254 3C61-XX LSD3C62-XX LSD3C64-XX LSD3C65-XX LSD3C63-XX GaP λP (nm) Vf(v) @ 20mA Min Max 2.8 2.8 2.8 2.4 2.4 2.8 2.8 2.8 2.8 2.4 Iv(mcd) @ 10mA Min 1.5 2.2 2.5 3.5 2.5 1.5 2.2 2.5 3.5 2.5 PIN NO.1 8.0 (0.315") 11.0 (0.433") 2.0X4= 8.0 (0.315") em |
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Panasonic Semiconductor |
2SB1434 • Low collector to emitter saturation voltage VCE(sat) • Allowing supply with the radial taping 6.9±0.1 1.05 2.5±0.1 ±0.05 (1.45) 0.8 0.15 0.7 4.0 0.65 max. 1.0 1.0 0.2 0.45−0.05 +0.1 1 2 3 Collector to base voltage Collector to emitte |
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Panasonic Semiconductor |
2SB950 q q q High foward current transfer ratio hFE High-speed switching Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratings –60 –80 –60 –80 –5 –8 –4 40 2 150 –55 to +150 Unit V 16.7±0.3 φ3.1±0.1 4.0 14.0±0.5 s A |
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Panasonic Semiconductor |
2SB1030 q Optimum for high-density mounting. q Allowing supply with the radial taping. s Absolute Maximum Ratings (Ta=25˚C) Parameter Collector to 2SB1030 base voltage 2SB1030A Collector to 2SB1030 emitter voltage 2SB1030A Emitter to base voltage Peak coll |
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Panasonic Semiconductor |
2SB621 0.45 –0.1 +0.2 0.45 –0.1 1.27 +0.2 emitter voltage 2SB621A Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature V V A A mW ˚C ˚C 1.27 1 2 3 2.3±0.2 2.54±0.15 |
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Panasonic Semiconductor |
2SB950A q q q High foward current transfer ratio hFE High-speed switching Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratings –60 –80 –60 –80 –5 –8 –4 40 2 150 –55 to +150 Unit V 16.7±0.3 φ3.1±0.1 4.0 14.0±0.5 s A |
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Panasonic Semiconductor |
2SB1108 |
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Panasonic Semiconductor |
Silicon PNP epitaxial planer type Transistor • Large collector current IC • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 1 0.40+0.10 –0.05 3 0.16+0.10 –0.06 1.50+0.25 –0.05 2.8+0.2 –0.3 2 (0.95) (0.95) 1 |
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Panasonic Semiconductor |
2SB1503 q Optimum for 110W HiFi output q High foward current transfer ratio hFE: 5000 to 30000 q Low collector to emitter saturation voltage VCE(sat): < –2.5V s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Collector to base voltage Colle |
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Panasonic Semiconductor |
Silicon PNP epitaxial planer type Transistor q q 2.6±0.1 0.4max. s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SB766 2SB766A 2SB766 VCEO VEBO ICP IC PC* Tj Tstg Symbol VCBO (Ta=25˚C) Ratings –30 –60 –25 –50 –5 –1.5 –1 1 150 –55 ~ +150 1cm2 Unit V 45° 1.0 –0.2 |
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Panasonic Semiconductor |
Silicon PNP Transistor • Large collector current IC • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing 1 0.40+0.10 –0.05 3 1.50+0.25 –0.05 2.8+0.2 –0.3 Unit: mm 0.16+0.10 –0.06 2 (0.65) (0. |
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Panasonic Semiconductor |
Silicon PNP Transistor 0.45 –0.1 +0.2 0.45 –0.1 1.27 +0.2 emitter voltage 2SB621A Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature V V A A mW ˚C ˚C 1.27 1 2 3 2.3±0.2 2.54±0.15 |
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Panasonic Semiconductor |
Silicon PNP epitaxial planer type Transistor q 1.5 R0.9 R0.9 1.0±0.1 0.85 Parameter Collector to base voltage Collector to 2SB643 2SB644 2SB643 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings –30 –60 –25 –50 –7 –1 – 0.5 600 150 –55 ~ +150 Unit 0.55±0.1 0.45±0.05 1.25±0.05 V 3 2 1 emit |
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Panasonic Semiconductor |
Silicon PNP Transistor q q q 1.5 R0.9 R0.9 0.85 0.55±0.1 0.45±0.05 1.25±0.05 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Juncti |
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Panasonic Semiconductor |
PNP Transistor q q q Low collector to emitter saturation voltage VCE(sat) High-speed switching N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. 1.5±0.1 1.5max. 1.1max. 10.5min. 2.0 |
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Desde 2024. D4U Semiconductor.
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