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| Distributor | Stock | Price | Buy |
|---|
2SB936A |
| Part Number | 2SB936A |
| Manufacturer | Guangdong Kexin |
| Title | Silicon PNP Transistor |
| Description | SMD Type Silicon PNP Epitaxial Planar Type 2SB936A TO-252 +0.15 1.50 -0.15 Transistors Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 Features Low collector-emitter saturation voltage VCE(sat). High-speed switching. +0.2 9.70 -0.2 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 ma. |
| Features | Low collector-emitter saturation voltage VCE(sat). High-speed switching. +0.2 9.70 -0.2 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Col. |
2SB936A |
| Part Number | 2SB936A |
| Manufacturer | Panasonic Semiconductor |
| Title | Power Transistors |
| Description | Power Transistors 2SB0936 (2SB936), 2SB0936A (2SB936A) www.DataSheet4U.net Silicon PNP epitaxial planar type For low-voltage switching ■ Features • Low collector-emitter saturation voltage VCE(sat) • High-speed switching • N type package enabling direct soldering of the radiating fin to the printe. |
| Features |
• Low collector-emitter saturation voltage VCE(sat) • High-speed switching • N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. 10.0±0.3 1.5±0.1 Unit: mm 8.5±0.2 6.0±0.2 3.4±0.3 1.0±0.1 4.4±0.5 Parameter Collector-base voltage (Emitter open) 2SB0936 2SB0936A Symbol VCBO VCEO VEBO IC ICP PC Ta = 25°C Tj Tstg Rating −4. |
2SB936A |
| Part Number | 2SB936A |
| Manufacturer | TY Semiconductor |
| Title | Transistor |
| Description | Product specification 2SB936A TO-252 +0.15 1.50 -0.15 Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 Features Low collector-emitter saturation voltage VCE(sat). High-speed switching. +0.2 9.70 -0.2 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60. |
| Features | Low collector-emitter saturation voltage VCE(sat). High-speed switching. +0.2 9.70 -0.2 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Col. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SB936 |
Panasonic Semiconductor |
PNP Transistor |
|
| 2 | 2SB936 |
Panasonic Semiconductor |
Power Transistors |
|
| 3 | 2SB936 |
Kexin |
Transistor |
|
| 4 | 2SB936 |
TY Semiconductor |
Transistor |
|
| 5 | 2SB936 |
Unisonic Technologies |
PNP EPITAXIAL SILICON TRANSISTOR |
|
| 6 | 2SB930 |
Panasonic Semiconductor |
PNP Transistor |
|
| 7 | 2SB930 |
TY Semiconductor |
Transistor |
|
| 8 | 2SB930A |
Panasonic Semiconductor |
PNP Transistor |
|
| 9 | 2SB930A |
Kexin |
Transistor |
|
| 10 | 2SB930A |
TY Semiconductor |
Transistor |
|
Desde 2024. D4U Semiconductor.
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