No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Panasonic |
Ceramic Disc Capacitors q Related by IEC60384-14 2nd Ed. and approved by European Safety Regulations (Types TS and NSÐA) q Reinforced Body Insulation /0.4mm min. approved by BSI, VDE (Type NS-A) q Flame-retardant insulating coating applied q Easy mounting through kinked Lea |
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Panasonic |
Silicon NPN Transistor 0.33+ –00..0025 0.10+ –00..0025 Low noise figure NF 3 High forward transfer gain |S21e|2 0.15 min. 0.80±0.05 1.20±0.05 High transition frequency fT 5° 0.15 min. Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit 0.23+ |
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Panasonic |
Silicon NPN Transistor High transition frequency fT 0.60±0.05 Small collector output capacitance (Common base, input open circuited) Cob 3 2 and reverse transfer capacitance (Common base) Crb Optimum for high-density mounting and downsizing of the equipment for |
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Panasonic Semiconductor |
2SC6012 • High breakdown voltage, and high reliability through the use of a glass passivation layer • High-speed switching • Wide safe oeration area 26.5±0.5 (23.4) (2.0) 5˚ (4.0) 2.0±0.2 1.1±0.1 0.7±0.1 5.45±0.3 10.9±0.5 5.5±0.3 5˚ 5˚ ■ Absolute Maximu |
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Panasonic Semiconductor |
Silicon NPN triple diffusion Power Transistor • High breakdown voltage, and high reliability through the use of a glass passivation layer • High-speed switching • Wide safe oeration area 26.5±0.5 (23.4) (2.0) 5˚ (4.0) 2.0±0.2 1.1±0.1 0.7±0.1 5.45±0.3 10.9±0.5 5.5±0.3 5˚ 5˚ ■ Absolute Maximu |
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Panasonic |
Silicon NPN Transistor High transition frequency fT 0.60±0.05 Small collector output capacitance (Common base, input open circuited) Cob 3 2 and reverse transfer capacitance (Common base) Crb Optimum for high-density mounting and downsizing of the equipment for |
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Panasonic |
Silicon NPN Transistor 3 Low collector-emitter saturation voltage VCE(sat) (0.375) 0.85−+00..0035 1.60±0.05 5° SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing 12 0.27±0.02 (0.80) Absolute Maximum Rati |
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Panasonic Semiconductor |
Silicon NPN Transistors 3 0.15 min. 0.80±0.05 1.20±0.05 Low collector-emitter saturation voltage VCE(sat) 5° 0.15 min. SSS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing Absolute Maximum Ratings Ta = 25 |
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Panasonic |
(EVQ Series) 5N Type Light Touch Switches w ● 6.0 mm҂6.0 mm square, body thickness 3.2 mm Japan Malaysia China Light Touch Switches/5N Type ● Travel 0.25 mm (clear click feeling) ● Wide selection with or without ground terminal, top-push or side-operation type with snap-in terminals availa |
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Panasonic |
Silicon NPN Transistor 3 (0.375) 0.85 –+00..0035 1.60±0.05 5° High forward current transfer ratio hFE SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing. 12 0.27±0.02 (0.50)(0.50) (0.80) / Absolute Maximu |
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Panasonic |
Silicon NPN Transistor Package High forward current transfer ratio hFE Code SS-Mini type package, allowing downsizing of the equipment and automatic SSMini3-F3 insertion through the tape packing. Marking Symbol: 7M Pin Name 1: Base / Absolute Maximu |
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Panasonic |
Silicon NPN Transistor 0.33+ –00..0025 0.10+ –00..0025 Low noise figure NF 3 High forward transfer gain |S21e|2 0.15 min. 0.80±0.05 1.20±0.05 High transition frequency fT 5° 0.15 min. Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit 0.23+ |
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Panasonic |
Silicon NPN Transistor Package Low collector-emitter saturation voltage VCE(sat) Code SS-Mini type package, allowing downsizing of the equipment and automatic SSMini3-F3 insertion through the tape packing Marking Symbol: 4U Pin Name Absolute Maximum |
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Panasonic |
Silicon NPN Transistor Package Low collector-emitter saturation voltage VCE(sat) Code SSS-Mini type package, allowing downsizing of the equipment and automatic SSSMini3-F2 insertion through the tape packing Marking Symbol: 4U Pin Name Absolute Maximu |
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