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2SC6012 |
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| Part Number | 2SC6012 |
| Manufacturer | Panasonic Semiconductor |
| Description | Power Transistors 2SC6012 Silicon NPN triple diffusion mesa type For horizontal deflection output 15.5±0.5 (10.0) Unit: mm φ 3.2±0.1 5˚ (4.5) 3.0±0.3 5˚ ■ Features • High breakdown voltage, and hi... |
| Features |
• High breakdown voltage, and high reliability through the use of a glass passivation layer • High-speed switching • Wide safe oeration area 26.5±0.5 (23.4) (2.0) 5˚ (4.0) 2.0±0.2 1.1±0.1 0.7±0.1 5.45±0.3 10.9±0.5 5.5±0.3 5˚ 5˚ ■ Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (E-B short) Emitter-base voltage (Collector open) Base current Collector current Peak collector current * Collector power dissipation Ta = 25°C Junction temperature Storage temperature Tj Tstg Symbol VCBO VCES VEBO IB IC ICP PC Rating 1 700 1 700 7 3 15 24... |
| Document |
 2SC6012 Data Sheet
PDF 89.03KB |
Similar Datasheet
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|---|---|---|---|---|
| 1 | 2SC6010 |
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| 2 | 2SC6011 |
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| 3 | 2SC6011 |
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| 4 | 2SC6011 |
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| 5 | 2SC6011A |
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| 6 | 2SC6011A |
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Desde 2024. D4U Semiconductor.
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