No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Panasonic |
2SC4309 |
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Panasonic Semiconductor |
Silicon NPN Transistor • Low collector-emitter saturation voltage VCE(sat) 0.65 max. (1.0) 14.5±0.5 • High collector-emitter voltage (Base open) VCEO • Allowing supply with the radial taping ■ Absolute Maximum Ratings Ta = 25°C / Parameter Symbol Rating Unit e ) C |
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Panasonic |
Hight Bright Surface Mounting Chip LED |
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Panasonic |
Silicon NPN Transistor (0.7) 15.0±0.3 11.0±0.2 Unit: mm 5.0±0.2 (3.2) • High-speed switching 21.0±0.5 15.0±0.2 • High collector-base voltage (Emitter open) VCBO φ 3.2±0.1 • Wide safe oeration area • Satisfactory linearity of forward current transfer ratio hFE ■ Ab |
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Panasonic |
Silicon NPN Transistor • Low collector-emitter saturation voltage VCE(sat) 0.65 max. (1.0) 14.5±0.5 • High collector-emitter voltage (Base open) VCEO • Allowing supply with the radial taping ■ Absolute Maximum Ratings Ta = 25°C / Parameter Symbol Rating Unit e ) C |
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Panasonic |
Hight Bright Surface Mounting Chip LED |
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Panasonic |
Silicon NPN Triple Diffused Planar Type Power Transistors |
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Panasonic Semiconductor |
Silicon NPN Transistor |
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Panasonic |
Hight Bright Surface Mounting Chip LED |
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Panasonic |
Silicon NPN Transistor (0.7) 15.0±0.3 11.0±0.2 Unit: mm 5.0±0.2 (3.2) • High-speed switching 21.0±0.5 15.0±0.2 • High collector-base voltage (Emitter open) VCBO φ 3.2±0.1 • Wide safe oeration area • Satisfactory linearity of forward current transfer ratio hFE ■ Ab |
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