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C4359 |
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| Part Number | C4359 |
| Manufacturer | Panasonic |
| Description | Power Transistors 2SC4359 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching ■ Features (0.7) 15.0±0.3 11.0±0.2 Unit: mm 5.0±0.2 (3.2) • High-speed switching... |
| Features |
(0.7)
15.0±0.3 11.0±0.2
Unit: mm 5.0±0.2
(3.2)
• High-speed switching 21.0±0.5 15.0±0.2 • High collector-base voltage (Emitter open) VCBO φ 3.2±0.1 • Wide safe oeration area • Satisfactory linearity of forward current transfer ratio hFE ■ Absolute Maximum Ratings TC = 25°C / Parameter Symbol Rating Unit 16.2±0.5 (3.5) Solder Dip 2.0±0.2 1.1±0.1 2.0±0.1 0.6±0.2 e Collector-base voltage (Emitter open) VCBO 900 V pe) Collector-emitter voltage (E-B short) VCES 900 V nc d ge. ed ty Collector-emitter voltage (Base open) VCEO 800 V sta tinu Emitter-base voltage (Collector ope... |
| Document |
 C4359 Data Sheet
PDF 206.98KB |
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