Panasonic 2SC Hoja de datos

No.	parte #	Fabricante	Descripción
1	C5885	Panasonic	2SC5885 9.9±0.3 4.6±0.2 2.9±0.2 15.0±0.3 8.0±0.2 1.0±0.1 • High breakdown voltage: VCBO ≥ 1 500 V • Wide safe operation area φ3.2±0.1 • Built-in dumper diode I Absolute Maximum Ratings TC = 25°C / Parameter Symbol Rating Unit 13.7-+00..25 2.0±0.2
2	C4767	Panasonic	2SC4767 q High transition frequency fT. q Output of 0.6W is obtained in the VHF band (f=175MHz). s Absolute Maximum Ratings (Ta=25˚C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector
3	C829	Panasonic	2SC829 q Optimum for RF amplification, oscillation, mixing, and IF stage of FM/AM radios. s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Jun
4	C1846	Panasonic	2SC1846 3.05±0.1 • Low collector-emitter saturation voltage VCE(sat) • Output of 3 W can be obtained by a complementary pair with 2SA0885 • TO-126B package which requires no insulation plate for installation to the heat sink 1.9±0.1 16.0±1.0 / ■ Absolut
5	C5909	Panasonic	2SC5909 15.5±0.5 φ 3.2±0.1 5˚ 3.0±0.3 5˚ (4.5) 26.5±0.5 (2.0) (1.2) (10.0) (23.4) 22.0±0.5 • High breakdown voltage: VCBO ≥ 1 500 V • High-speed switching: tf < 200 ns • Wide safe operation area 5˚ (4.0) 5˚ 2.0±0.2 5˚ ■ Absolute Maximum Ratings
6	C4212	Panasonic Semiconductor	2SC4212 I Absolute Maximum Ratings TC = 25°C www.DataSheet4U.com Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Symbol VCBO VCEO VEBO ICP IC PC Tj
7	2SC5128	Panasonic Semiconductor	Silicon NPN Transistor q q q q φ3.2±0.1 9.9±0.3 2.9±0.2 4.1±0.2 8.0±0.2 Solder Dip High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Full-pack package with outstanding insulation, which can be installed to the heat sink with on
8	C3507	Panasonic	2SC3507 11.0±0.2 (3.2) • High-speed switching 21.0±0.5 15.0±0.2 • High collector-base voltage (Emitter open) VCBO φ 3.2±0.1 • Satisfactory linearity of forward current transfer ratio hFE • Full-pack package which can be installed to the heat sink with
9	C5407	Panasonic	2SC5407 φ3.2±0.1 5° 26.5±0.5 3.0±0.3 5° 23.4 22.0±0.5 2.0 1.2 5° 18.6±0.5 5° 5° s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Co
10	2SC1047	Panasonic Semiconductor	Silicon NPN Transistor 5.1±0.2 • Optimum for RF amplification of FM/AM radios • High transition frequency fT 0.7±0.2 12.9±0.5 0.7±0.1 ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit / Collector-base voltage (Emitter open) VCBO 30 V e Collecto
11	C5346	Panasonic Semiconductor	2SC5346 q q q Satisfactory linearity of forward current transfer ratio hFE. High collector to emitter voltage VCEO. Small collector output capacitance Cob. 0.65 max. 1.0 1.0 0.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to
12	C1473	Panasonic Semiconductor	2SC1473 • High collector-emitter voltage (Base open) VCEO • High transition frequency fT 0.7±0.1 ■ Absolute Maximum Ratings Ta = 25°C 0.7±0.2 12.9±0.5 / Parameter Symbol Rating Unit e ) Collector-base voltage 2SC1473 VCBO 250 V c type (Emitter ope
13	C5244A	Panasonic	2SC5244A 20.0±0.5 φ 3.3±0.2 5.0±0.3 3.0 3.0 2.0 4.0 10.0 6.0 q High breakdown voltage, and high reliability through the use of a glass passivation layer q High-speed switching q Wide area of safe operation (ASO) 1.5 26.0±0.5 / 2.0±0.3 2.0 1.5 1
14	C5521	Panasonic	2SC5521 contribute to higher performing, more reliable home-use TVs that cost less. s Features www.DataSheet4U.com q Withstands ultrahigh voltage : 1500V/1600V/1700V/1800V/2000V q Low loss:VCE(sat)<3V q Broad area of safe-operation. s Spacifications Param
15	C2634	Panasonic Semiconductor	2SC2634 • Low noise voltage NV • High forward current transfer ratio hFE 0.7±0.1 ■ Absolute Maximum Ratings Ta = 25°C 0.7±0.2 12.9±0.5 / Parameter Symbol Rating Unit e ) Collector-base voltage (Emitter open) VCBO 60 V c type Collector-emitter vol
16	C3611	Panasonic Semiconductor	2SC3611 φ 3.16±0.1 3.8±0.3 11.0±0.5 3.05±0.1 • High transition frequency fT • Small collector output capacitance (Common base, input open cir- cuited) Cob • Wide current range • TO-126B package which requires no insulation plate for installa- tion to th
17	2SC1317	Panasonic Semiconductor	Silicon NPN Transistor  Package  Low collector-emitter saturation voltage VCE(sat)  Code  Complementary pair with 2SA0719 TO-92B-B1  Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit / Collector-base voltage (Emitter open) VCBO 30 V  Pin N
18	2SC1573	Panasonic Semiconductor	Silicon NPN Transistor q High collector to emitter voltage VCEO. q High transition frequency fT. s Absolute Maximum Ratings (Ta=25˚C) Parameter Symbol Ratings Unit 2SC1573 250 Collector to 2SC1573A VCBO 300 V base voltage 2SC1573B 400 2SC1573 200 Collector
19	2SC5037	Panasonic Semiconductor	NPN TRANSISTOR q q q q q 4.1±0.2 8.0±0.2 Solder Dip High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Full-pack package with outstanding insulation, which can be
20	2SC5363	Panasonic Semiconductor	NPN TRANSISTOR q q q 0.4 0.8±0.1 0.4 0.2 –0.05 0.15 –0.05 +0.1 High transition frequency fT. Small collector output capacitance Cob. SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing. 1.6±0.1 1.0±0.1 0.