| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Pan Jit International |
PJD09N03 • RDS(ON), VGS@10V,IDS@30A=9mΩ • RDS(ON), [email protected],IDS@30A=12mΩ • Advanced trench process technology • High Density Cell Design For Uitra Low On-Resistance • Specially Designed for DC/DC Converters and Motor Drivers • Fully Characterized Avalanche Vo |
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Pan Jit International |
N-Channel Enhancement Mode MOSFET • RDS(ON), VGS@10V,IDS@30A=9mΩ • RDS(ON), [email protected],IDS@30A=12mΩ • Advanced trench process technology • High Density Cell Design For Uitra Low On-Resistance • Specially Designed for DC/DC Converters and Motor Drivers • Fully Characterized Avalanche Vo |
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Desde 2024. D4U Semiconductor.
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