PINGWEI 11N Hoja de datos

No.	parte #	Fabricante	Descripción
1	11N65S	PINGWEI	N-Channel MOSFET  11A,650V,RDS(ON)MAX=0.36Ω@VGS=10V/5.5A  Low gate charge  Low Ciss  Fast switching  100% avalanche tested  Improved dv/dt capability TO-220AB 11N65S ITO-220AB 11N65FS TO-263 11N65BS TO-262 \ 11N65HS Absolute Maximum Ratings(TC=25℃,unles
2	11N65BS	PINGWEI	N-Channel MOSFET  11A,650V,RDS(ON)MAX=0.36Ω@VGS=10V/5.5A  Low gate charge  Low Ciss  Fast switching  100% avalanche tested  Improved dv/dt capability TO-220AB 11N65S ITO-220AB 11N65FS TO-263 11N65BS TO-262 \ 11N65HS Absolute Maximum Ratings(TC=25℃,unles
3	11N65HS	PINGWEI	N-Channel MOSFET  11A,650V,RDS(ON)MAX=0.36Ω@VGS=10V/5.5A  Low gate charge  Low Ciss  Fast switching  100% avalanche tested  Improved dv/dt capability TO-220AB 11N65S ITO-220AB 11N65FS TO-263 11N65BS TO-262 \ 11N65HS Absolute Maximum Ratings(TC=25℃,unles
4	11N65FS	PINGWEI	N-Channel MOSFET  11A,650V,RDS(ON)MAX=0.36Ω@VGS=10V/5.5A  Low gate charge  Low Ciss  Fast switching  100% avalanche tested  Improved dv/dt capability TO-220AB 11N65S ITO-220AB 11N65FS TO-263 11N65BS TO-262 \ 11N65HS Absolute Maximum Ratings(TC=25℃,unles