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11N65HS |
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| Part Number | 11N65HS |
| Manufacturer | PINGWEI |
| Description | 11N65(F,B,H)S 11 Amps,650 Volts N-Channel Super Junction Power MOSFET FEATURE 11A,650V,RDS(ON)MAX=0.36Ω@VGS=10V/5.5A Low gate charge Low Ciss Fast switching 100% avalanche tested Improv... |
| Features |
Channel to Case
Thermal resistance , Channel to Ambient
Maximum Power Dissipation
TC=25℃
Symbol Rth(J-c) Rth(ch-c) Rth(ch-a)
PD
ITO-220 3.82 3.82 80 32.7
TO-220 1.03 1.03 62 121
TO-262/263 1.03 1.03 62 121
Units ℃/W ℃/W ℃/W
W
Version1.0-2015.2
www.perfectway.cn
Electrical Characteristics (Tc=25℃,unless otherwise noted)
Parameter
Symbol
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
Breakdown Temperature Coefficient
ΔBVDSS
/ΔTJ
Zero Gate Voltage Drain Current
IDSS
Gate-Body Leakage Current,Forward
IGSSF
Gate-Body Leakage Current,Reverse
IGSSR
On Characterist... |
| Document |
 11N65HS Data Sheet
PDF 743.91KB |
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