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Oucan Semi FQI DataSheet

No. parte # Fabricante Descripción Hoja de Datos
1
FQI4N60

Oucan Semi
600V 4A N-Channel MOSFET
Datasheet
2
FQI4N65

Oucan Semi
4A N-Channel MOSFET
T dv/dt ruggedness Peak diode recovery dv/dt ID IDM IAR EAR EAS dv/dt TC=25°C Power Dissipation B Derate above 25oC PD Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TJ, TSTG
Datasheet



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