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FQI4N65 |
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| Part Number | FQI4N65 |
| Manufacturer | Oucan Semi |
| Description | Product Summary The FQD4N65& FQI4N65 & FQU4N65 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-... |
| Features |
T dv/dt ruggedness
Peak diode recovery dv/dt
ID
IDM IAR EAR EAS
dv/dt
TC=25°C Power Dissipation B Derate above 25oC
PD
Junction and Storage Temperature Range
Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds
TJ, TSTG TL
AOU4N60
Maximum 650 ±30 4 2.6 14 2.8 118 235 50 5 104 0.83
-50 to 150
300
Thermal Characteristics
Parameter Maximum Junction-to-Ambient A,G Maximum Case-to-sink A Maximum Junction-to-CaseD,F
Symbol RθJA RθCS RθJC
Typical 43 1
Maximum 55 0.5 1.2
G SD G
S
Units V V
A
A mJ mJ V/ns W W/ oC °C
°C
Units °C/W °C/W °C/W
Page 1 of 6
FQD4N65/FQI... |
| Document |
 FQI4N65 Data Sheet
PDF 383.88KB |
Similar Datasheet
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Desde 2024. D4U Semiconductor.
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