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Oucan Semi |
4A N-Channel MOSFET T dv/dt ruggedness Peak diode recovery dv/dt ID IDM IAR EAR EAS dv/dt TC=25°C Power Dissipation B Derate above 25oC PD Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TJ, TSTG |
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Oucan Semi |
600V 4A N-Channel MOSFET |
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Oucan Semi |
60V N-Channel MOSFET imum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Typ 17.4 50 4 Max 30 60 7.5 Units V V A A A mJ W W °C Units °C/W °C/W °C/W Electrical Characteristics (TJ=25° |
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Oucan Semi |
N-Channel MOSFET 0 Units °C/W 1 Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions BVDSS ∆ΒVDSS/∆TJ RDS(on) Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance 30 – |
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Oucan Semi |
60V N-Channel MOSFET A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Typ 17.4 51 1.8 Max 25 60 2.5 Rev 0 : Aug 2011 Units V V A A A mJ W W °C Units °C/W °C/W °C/W Page 1 of 6 Electrical Characteristics |
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Desde 2024. D4U Semiconductor.
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