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FQD60N07 |
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| Part Number | FQD60N07 |
| Manufacturer | Oucan Semi |
| Description | The FQD60N07 used advanced trench technology to provide excellent RDS(ON) and low gate charge. Those devices are suitable for use as a load switch or in PWM applications. Product Summary VDS ID (at V... |
| Features |
A Maximum Junction-to-Ambient A D Maximum Junction-to-Case
t ≤ 10s Steady-State Steady-State
Symbol RθJA RθJC
Typ 17.4 51 1.8
Max 25 60 2.5
Rev 0 : Aug 2011
Units V V
A
A A mJ W
W °C
Units °C/W °C/W °C/W
Page 1 of 6
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=250µA, VGS=0V VDS=48V, VGS=0V
IGSS VGS(th) ID(ON)
RDS(ON)
gFS VSD IS
Gate-Body leakage current Gate Threshold Voltage On state drain current
Static Drain-Source On-Resistance
VDS=0V, VG... |
| Document |
 FQD60N07 Data Sheet
PDF 435.29KB |
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Desde 2024. D4U Semiconductor.
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