| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Toshiba Semiconductor |
Diode ings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failu |
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Toshiba Semiconductor |
Silicon Diode emperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individu |
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F.E.C. Semiconductor |
3.0A Surface Mount Schottky Rectifier The plastic package carries Underwriters Laboratory flammability classification 94V-0 Metal silicon junction, majority carrier conduction Low power loss, high efficiency High forward surge current capability High temperature soldering guaranteed : 25 |
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Toshiba Semiconductor |
Silicon Epitaxial Planar Type Diode ture/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual rel |
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ON Semiconductor |
Schottky Rectifier • Metal to Silicon Rectifiers, Majority Carrier Conduction • Low−Forward Voltage Drop • Easy Pick and Place • High−Surge Current Capability • This Device is Pb−Free and Halide Free DATA SHEET www.onsemi.com 1 Cathode 2 Anode SMC CASE 403AG MARKI |
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Toshiba Semiconductor |
Silicon Epitaxial Schottky Barrie Diode te maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and e |
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Taiwan Semiconductor |
Surface Mount Schottky Barrier Rectifier ● Low power loss, high efficiency ● Ideal for automated placement ● Guard ring for over-voltage protection ● High surge current capability ● Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 6 |
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China Semiconductor |
Numeric / Alphanumeric Display |
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Toshiba Semiconductor |
Diode e within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability t |
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Toshiba Semiconductor |
Silicon Epitaxial Schottky Barrier Type Diode iate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Chara |
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Toshiba Semiconductor |
Silicon diode esign the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). |
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Toshiba Semiconductor |
Silicon Diode within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability |
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ON Semiconductor |
Schottky Rectifier • Metal to Silicon Rectifiers, Majority Carrier Conduction • Low−Forward Voltage Drop • Easy Pick and Place • High−Surge Current Capability • This Device is Pb−Free and Halide Free DATA SHEET www.onsemi.com 1 Cathode 2 Anode SMC CASE 403AG MARKI |
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General Semiconductor |
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ For surface mount applications ♦ Low profile package ♦ Built-in strain relief, ideal for automated placement ♦ Easy pick and place ♦ Metal silicon junction, majority ca |
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Mitsubishi Electric Semiconductor |
Dual-In-Line Package Intelligent Power Module ) DIPIPM HVIC1 IGBT1 Di1 HO P(37) U(36) VVFS(7) VVFB(9) VP1(10) VP(12) HVIC2 IGBT2 Di2 HO V(35) VWFS(13) VWFB(15) VP1(16) W P(18) HO HVIC3 IGBT3 Di3 W(34) IGBT4 LVIC Di4 UOUT VOT(20) UN(21) NU(33) IGBT5 Di5 VOUT VN(22) W N(23) FO(24) IGBT6 |
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ON Semiconductor |
Low Leakage Trench-based Schottky Rectifier • Fine Lithography Trench−based Schottky Technology for Very Low Forward Voltage and Low Leakage • Fast Switching with Exceptional Temperature Stability • Low Power Loss and Lower Operating Temperature • Higher Efficiency for Achieving Regulatory Com |
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Toshiba Semiconductor |
Silicon Epitaxial Planar Type Diode e and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please |
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Toshiba Semiconductor |
Silicon Epitaxial Planar Type Diode voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. |
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Toshiba Semiconductor |
Silicon Epitaxial Planar Type Diode to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconduc |
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Toshiba Semiconductor |
Silicon Epitaxial Planar Type Diode |
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Desde 2024. D4U Semiconductor.
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