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1SS322 |
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| Part Number | 1SS322 |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS322 Low Voltage High Speed Switching Low forward voltage Low reverse current Small package : VF (3) = 0.54V (typ.) : IR = 5μA (max) : S... |
| Features |
iate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage Reverse current Total capacitance
Symbol
VF (1) VF (2) VF (3)
IR CT
Test Condition
IF = 1mA IF = 10mA IF = 100mA VR = 40V VR = 0, f = 1MHz
Min Typ. Max Unit
― 0.28 ―
― 0.36 ―
V
― 0.54 0.60
―
―
5
μA
―
18
25
pF
Marking
Start of commercial production
1988-01
1
2015-01-15
1SS322... |
| Document |
 1SS322 Data Sheet
PDF 290.55KB |
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