ON Semiconductor RD0 Hoja de datos

No.	parte #	Fabricante	Descripción
1	RD07MUS2B	Mitsubishi Electric Semiconductor	Silicon RF Power MOSFET High power gain and High Efficiency. Typical Po Gp ηD (175MHz) 7.2W 13.8dB 65% (527MHz) 8W 13.0dB 63% (870MHz) 7W 11.5dB 58% Integrated gate protection diode. 3 (0.25) (0.25) INDEX MARK (Gate) 0.2+/-0.05 0.9+/-0.1 Terminal No. 1.Drain (output) 2
2	QRD0610T30	Powerex Power Semiconductors	Fast Recovery Diode Module (100 Amp/600 Volts) Fast Recovery Time Isolated Mounting Metal Baseplate Low Thermal Impedance 3000 V isolating voltage QRC QRF Applications: Switching Power Supplies Inverters Choppers Welding Power Supplies Free Wheeling Diode High Frequency Rectifiers Dimensions
3	QRD0620T30	Powerex Power Semiconductors	Fast Recovery Diode Module (200 Amp/600 Volts) Fast Recovery Time Isolated Mounting Metal Baseplate Low Thermal Impedance 3000 V isolating voltage QRD QRC QRF Applications: Switching Power Supplies Inverters Choppers Welding Power Supplies Free Wheeling Diode High Frequency Rectifiers Dimen
4	QRD0630T30	Powerex Power Semiconductors	Fast Recovery Diode Module (300 Amp/600 Volts) Fast Recovery Time Isolated Mounting Metal Baseplate Low Thermal Impedance 3000 V isolating voltage QRC QRF Applications: Switching Power Supplies Inverters Choppers Welding Power Supplies Free Wheeling Diode High Frequency Rectifiers Dimensions
5	QRD0640T30	Powerex Power Semiconductors	Fast Recovery Diode Module (400 Amp/600 Volts) Fast Recovery Time Isolated Mounting Metal Baseplate Low Thermal Impedance 3000 V isolating voltage QRC QRF Applications: Switching Power Supplies Inverters Choppers Welding Power Supplies Free Wheeling Diode High Frequency Rectifiers Dimensions
6	SRD00315A	Siemens Semiconductor Group	Ternary PIN Photodiode with Blocking Filter for 3rd Window older point and base plate (≥ 2 mm, 260 °C) Symbol Values 10 20 − 40 … + 85 1 10 Unit mA V °C mW s IF VR TA Tstg Φport ts Semiconductor Group 1 02.95 SRD 00314X SRD 00315X Characteristics All optical data refer to a coupled 10/125 µm SM fiber
7	SRD00534H	Siemens Semiconductor Group	Ge-Avalanche Photodiode with Pigtail / Central Pin with each component. Symbol Values 50 * − 40 … + 85 1 10 Unit mA V °C mW s IF VR TA Tstg Φport ts Semiconductor Group 1 02.95 SRD 00534X SRD 00535X Characteristics All optical data refer to an optimally coupled 10/125 µm SM fiber at ambient
8	SRD00214H	Siemens Semiconductor Group	Ternary PIN Photodiode with Pigtail e plate, (≥ 2 mm, 260 °C) Symbol Values 10 20 − 40 … + 85 1 10 Unit mA V °C mW s IF VR TA Tstg Φport ts Semiconductor Group 1 02.95 SRD 00214x SRD 00215x Characteristics All optical data refer to a coupled 10/125 µm SM fiber at ambient tempera
9	SRD00315G	Siemens Semiconductor Group	Ternary PIN Photodiode with Blocking Filter for 3rd Window older point and base plate (≥ 2 mm, 260 °C) Symbol Values 10 20 − 40 … + 85 1 10 Unit mA V °C mW s IF VR TA Tstg Φport ts Semiconductor Group 1 02.95 SRD 00314X SRD 00315X Characteristics All optical data refer to a coupled 10/125 µm SM fiber
10	RD06HVF1	Mitsubishi Electric Semiconductor	MOS FET type transistor specifically designed for VHF RF power amplifiers applications High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz note(3) APPLICATION For output stage of high power amplifiers in VHF band mobile radio sets. 1 2 3 PINS 1:GATE 2:SOURCE 3:DRAIN 4:FIN(SOURCE) note: (1)Torelance of no designation means typical
11	RD02MUS1B	Mitsubishi Electric Semiconductor	Silicon MOSFET Power Transistor High power gain: Pout>2W, Gp>16dB @Vdd=7.2V,f=175MHz, 520MHz High Efficiency: 65%typ. (175MHz) High Efficiency: 65%typ. (520MHz) 0.2+/-0.05 0.9+/-0.1 Terminal No. 1.Drain (output) 2.Source (GND) 3.Gate (input) Note ( ):center value UNIT:mm www.Da
12	SRD00212Z	Siemens Semiconductor Group	Ternary PIN Photodiode in TO-Package with Integrated Optics 10 20 − 40 … + 85 1 10 Unit mA V °C mW s IF VR TA Tstg Φport ts Semiconductor Group 1 02.95 SRD 00212Z Characteristics All optical data refer to an optimally coupled 10/125 µm SM fiber. Parameter Spectral sensitivity λ = 1300 nm, VR = 5 V Cha
13	SRD00215C	Siemens Semiconductor Group	Ternary PIN Photodiode with Pigtail e plate, (≥ 2 mm, 260 °C) Symbol Values 10 20 − 40 … + 85 1 10 Unit mA V °C mW s IF VR TA Tstg Φport ts Semiconductor Group 1 02.95 SRD 00214x SRD 00215x Characteristics All optical data refer to a coupled 10/125 µm SM fiber at ambient tempera
14	SRD00231Z	Siemens Semiconductor Group	Ternary PIN Photodiode in TO-Package / Central Pin /125 µm SM fiber. Parameter Spectral sensitivity λ = 1300 nm, VR = 5 V Change in spectral sensitivity in operating temperature range Rise and fall time RL = 50 Ω , VR = 5 V, λ = 1310 nm, Φport = 100 µW Total capacitance VR = 5 V,Φport = 0 f = 1 MHz D
15	SRD00314G	Siemens Semiconductor Group	Ternary PIN Photodiode with Blocking Filter for 3rd Window older point and base plate (≥ 2 mm, 260 °C) Symbol Values 10 20 − 40 … + 85 1 10 Unit mA V °C mW s IF VR TA Tstg Φport ts Semiconductor Group 1 02.95 SRD 00314X SRD 00315X Characteristics All optical data refer to a coupled 10/125 µm SM fiber
16	SRD00314X	Siemens Semiconductor Group	Ternary PIN Photodiode with Blocking Filter for 3rd Window older point and base plate (≥ 2 mm, 260 °C) Symbol Values 10 20 − 40 … + 85 1 10 Unit mA V °C mW s IF VR TA Tstg Φport ts Semiconductor Group 1 02.95 SRD 00314X SRD 00315X Characteristics All optical data refer to a coupled 10/125 µm SM fiber
17	SRD00514H	Siemens Semiconductor Group	Ge-Avalanche Photodiode with Pigtail bol Values 50 * − 40 … + 85 1 10 Unit mA V °C mW s IF VR TA Tstg Φport ts Semiconductor Group 1 02.95 SRD 00514X SRD 00515X Characteristics All optical data refer to an optimally coupled 10/125 µm SM fiber at ambient temperature of 25 °C, un
18	SRD00514X	Siemens Semiconductor Group	Ge-Avalanche Photodiode with Pigtail bol Values 50 * − 40 … + 85 1 10 Unit mA V °C mW s IF VR TA Tstg Φport ts Semiconductor Group 1 02.95 SRD 00514X SRD 00515X Characteristics All optical data refer to an optimally coupled 10/125 µm SM fiber at ambient temperature of 25 °C, un
19	RD04HMS2	Mitsubishi Electric Semiconductor	Silicon MOSFET Power Transistor 1. High Power gain and High Efficiency Pout=5.0Wtyp., Gp=14dBtyp. Drain Effi.=53%typ. @Vds=12.5V, Pin=0.2W, f=950MHz 2. Integrated gate protection diode 2 3 (0.25) (0.25) INDEX MARK (Gate) APPLICATION For output stage of high power amplifiers in
20	SRD00111Z	Siemens Semiconductor Group	Silicon PIN Photodiode in TO-Package 0 nm λ = 950 nm Rise and fall time RL = 50 Ω, VR = 50 V, λ = 850 nm Junction capacitance at f = 1 MHz VR = 0 V VR = 1 V VR = 12 V VR = 20 V 3 dB bandwidth RL = 50 Ω, VR = 50 V, λ = 850 nm Dark current VR = 20 V, E = 0 Noise equivalent power VR = 20 V