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RD06HVF1 |
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| Part Number | RD06HVF1 |
| Manufacturer | Mitsubishi Electric Semiconductor |
| Description | Silicon MOSFET Power Transistor 175MHz,6W RD06HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications. 4 FEATURES High power gain: Pout>6W, Gp>13dB @Vdd=12... |
| Features |
High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz
note(3)
APPLICATION
For output stage of high power amplifiers in VHF band mobile radio sets.
1
2 3
PINS 1:GATE 2:SOURCE 3:DRAIN 4:FIN(SOURCE) note: (1)Torelance of no designation means typical value. Dimension in mm. (2) :Dipping area
RoHS COMPLIANT
RD06HVF1-101 is a RoHS compliant products. :Copper of the ground work is exposed in case of frame separation. (3) RoHS compliance is indicate by the letter “G” after the lot marking. This product include the lead in high melting temperature type solders. How ever,it applicable to the follo... |
| Document |
 RD06HVF1 Data Sheet
PDF 541.43KB |
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