| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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ON Semiconductor |
SiC MOSFET • Typ. RDS(on) = 20 mW • Ultra Low Gate Charge (QG(tot) = 220 nC) • High Speed Switching with Low Capacitance (Coss = 258 pF) • 100% Avalanche Tested • AEC−Q101 Qualified and PPAP Capable • This Device is Halide Free and RoHS Compliant with exemption |
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ON Semiconductor |
N-Channel MOSFET • Ultra Low Gate Charge & Low Effective Output Capacitance • Lower FOM (RDS(on) max. x Qg typ. & RDS(on) max. x EOSS) • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant MAXIMUM RATINGS (TC = 25°C unless otherwis |
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ON Semiconductor |
SiC MOSFET • Typ. RDS(on) = 40 mW @ VGS = 18 V • Ultra Low Gate Charge (QG(tot) = 75 nC) • High Speed Switching with Low Capacitance (Coss = 80 pF) • 100% Avalanche Tested • AEC−Q101 Qualified and PPAP Capable • This Device is Halide Free and RoHS Compliant wit |
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ON Semiconductor |
Automotive N-Channel MOSFET • AEC−Q101 Qualified • Max Junction Temperature 150°C • Typ. RDS(on) = 19.9 mΩ • Ultra Low Gate Charge (Typ. QG = 236 nC) • Low Effective Output Capacitance (Typ. COSS(eff.) = 2062 pF) • 100% Avalanche Tested Typical Applications • Automotive PHEV−BE |
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ON Semiconductor |
SiC MOSFET • Typ. RDS(on) = 33 mW @ VGS = 18 V Typ. RDS(on) = 45 mW @ VGS = 15 V • Ultra Low Gate Charge (QG(tot) = 105 nC) • High Speed Switching with Low Capacitance (Coss = 162 pF) • 100% Avalanche Tested • AEC−Q101 Qualified and PPAP Capable • This Device i |
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ON Semiconductor |
N-Channel MOSFET • Ultra Low Gate Charge & Low Effective Output Capacitance • Lower FOM (RDS(on) max. x Qg typ. & RDS(on) max. x EOSS) • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant MAXIMUM RATINGS (TC = 25°C unless otherwis |
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ON Semiconductor |
N-Channel MOSFET • Ultra Low Gate Charge & Low Effective Output Capacitance • Lower FOM (RDS(on) max. x Qg typ. & RDS(on) max. x EOSS) • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant MAXIMUM RATINGS (TC = 25°C unless otherwis |
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ON Semiconductor |
N-Channel MOSFET • Ultra Low Gate Charge & Low Effective Output Capacitance • Lower FOM (RDS(on) max. x Qg typ. & RDS(on) max. x EOSS) • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant MAXIMUM RATINGS (TC = 25°C unless otherwis |
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ON Semiconductor |
SiC MOSFET • 1200 V @ TJ = 175°C • Max RDS(on) = 110 mW at VGS = 20 V, ID = 20 A • High Speed Switching with Low Capacitance • 100% Avalanche Tested • AEC−Q101 Qualified and PPAP Capable • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free |
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ON Semiconductor |
N-Channel Silicon Carbide MOSFET • Typ. RDS(on) = 80 mW • Ultra Low Gate Charge (typ. QG(tot) = 56 nC) • Low Effective Output Capacitance (typ. Coss = 80 pF) • 100% UIL Tested • AEC−Q101 Qualified and PPAP Capable • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb |
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ON Semiconductor |
N-Channel MOSFET • 650 V @ TJ = 150°C / Typ. RDS(on) = 32 mW • 100% Avalanche Tested • Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • Electric Vehicle On Board Chargers • EV Main Battery DC/DC Converters ABSOLUTE MAXIMUM RATINGS (TJ = 25°C, Un |
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ON Semiconductor |
SiC MOSFET • Typ. RDS(on) = 19 mW @ VGS = 18 V Typ. RDS(on) = 25 mW @ VGS = 15 V • Ultra Low Gate Charge (QG(tot) = 164 nC) • Low Capacitance (Coss = 278 pF) • 100% Avalanche Tested • AEC−Q101 Qualified and PPAP Capable • This Device is Pb−Free and is RoHS Comp |
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ON Semiconductor |
N-Channel MOSFET |
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ON Semiconductor |
N-Channel MOSFET • 700 V @ TJ = 150°C • Typ. RDS(on) = 78 mW • Ultra Low Gate Charge (Typ. Qg = 65 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 597 pF) • 100% Avalanche Tested • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen−Fre |
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ON Semiconductor |
SiC MOSFET • Typ. RDS(on) = 160 mW • Ultra Low Gate Charge (QG(tot) = 34 nC) • High Speed Switching with Low Capacitance (Coss = 49.5 pF) • 100% Avalanche Tested • AEC−Q101 Qualified and PPAP Capable • This Device is Halide Free and RoHS Compliant with exemptio |
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ON Semiconductor |
SiC MOSFET • Typ. RDS(on) = 40 mW • Ultra Low Gate Charge (QG(tot) = 106 nC) • High Speed Switching with Low Capacitance (Coss = 137 pF) • 100% Avalanche Tested • AEC−Q101 Qualified and PPAP Capable • This Device is Halide Free and RoHS Compliant with exemption |
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ON Semiconductor |
N-Channel MOSFET • Typ. RDS(on) = 20 mW • Ultra Low Gate Charge (typ. QG(tot) = 196 nC) • Low Effective Output Capacitance (typ. Coss = 296 pF) • 100% UIL Tested • Qualified According to AEC−Q101 • RoHS Compliant Typical Applications • Automotive On Board Charger • A |
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ON Semiconductor |
SiC MOSFET • Typ. RDS(on) = 44 mW @ VGS = 18 V Typ. RDS(on) = 60 mW @ VGS = 15 V • Ultra Low Gate Charge (QG(tot) = 74 nC) • Low Capacitance (Coss = 133 pF) • 100% Avalanche Tested • AEC−Q101 Qualified and PPAP Capable • This Device is Pb−Free and is RoHS Compl |
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ON Semiconductor |
N-Channel MOSFET • 700 V @ TJ = 150°C • Typ. RDS(on) = 33.8 mW • Ultra Low Gate Charge (Typ. Qg = 153 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 1333 pF) • 100% Avalanche Tested • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen |
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ON Semiconductor |
N-Channel MOSFET • AEC−Q101 Qualified • Max Junction Temperature 150°C • Typ. RDS(on) = 61 mΩ • Ultra Low Gate Charge (Typ. QG = 82 nC) • Low Effective Output Capacitance (Typ. COSS(eff.) = 724 pF) • 100% Avalanche Tested • These Devices are Pb−Free and are RoHS Comp |
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Desde 2024. D4U Semiconductor.
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