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NVH4L160N120SC1 |
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| Part Number | NVH4L160N120SC1 |
| Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
| Description | DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – 160 mohm, 1200 V, M1, TO-247-4L NVH4L160N120SC1 V(BR)DSS 1200 V RDS(ON) MAX 224 mW @ 20 V D ID MAX 17.3 A Features • Typ. RDS(on) = 160 mW • Ultra Low Gate Charge (QG(tot) = 34 nC) • High Speed Switching with Low Capacitance (Coss = 49.5 pF) • 100% Avalanche Tested • AEC−Q101 Qualified and PPAP Ca. |
| Features |
• Typ. RDS(on) = 160 mW • Ultra Low Gate Charge (QG(tot) = 34 nC) • High Speed Switching with Low Capacitance (Coss = 49.5 pF) • 100% Avalanche Tested • AEC−Q101 Qualified and PPAP Capable • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typical Applications • Automotive On Board Charger • Automotive DC-DC Converter for EV/HEV MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 1200 V Gate−to−Source Voltage VGS −15/+25 V Recommended Operation Values TC < 175°C VGSo. |
| Datasheet |
 NVH4L160N120SC1 Data Sheet
PDF 353.59KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | NVH4L110N65S3F |
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| 2 | NVH4L020N120SC1 |
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| 3 | NVH4L022N120M3S |
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| 4 | NVH4L027N65S3F |
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| 5 | NVH4L040N120M3S |
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| 6 | NVH4L040N120SC1 |
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| 7 | NVH4L040N65S3F |
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| 9 | NVH4L050N65S3F |
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| 10 | NVH4L060N065SC1 |
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Desde 2024. D4U Semiconductor.
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