| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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ON Semiconductor |
SiC MOSFET • Typ. RDS(on) = 80 mW • Ultra Low Gate Charge (Typ. QG(tot) = 56 nC) • Low Effective Output Capacitance (Typ. Coss = 79 pF) • 100% Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on secon |
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ON Semiconductor |
SiC MOSFET • Typ. RDS(on) = 14 mW • Low Switching Losses (Typ. EON 1331 mJ at 74 A, 800 V) • 100% Avalanche Tested Typical Applications • Solar Inverters • Electric Vehicle Charging Stations • UPS (Uninterruptible Power Supplies) • Energy Storage Systems • SMPS |
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ON Semiconductor |
SiC MOSFET • Typ. RDS(on) = 56 mW @ VGS = 18 V Typ. RDS(on) = 75 mW @ VGS = 15 V • Ultra Low Gate Charge (QG(tot) = 59 nC) • Low Effective Output Capacitance (Coss = 109 pF) • 100% Avalanche Tested • TJ = 175°C • RoHS Compliant Typical Applications • SMPS (Swi |
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ON Semiconductor |
NTB65N02R • • • • • http://onsemi.com V(BR)DSS 24 V RDS(on) TYP 8.4 mW @ 10 V ID MAX 65 A Planar HD3e Process for Fast Switching Performance Low RDSon to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Pb−Free Packages are Availabl |
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ON Semiconductor |
Power MOSFET • Ultra−Low RDS(on), Single Base, Advanced Technology • SPICE Parameters Available • Diode is Characterized for Use in Bridge Circuits • IDSS and VDS(on) Specified at Elevated Temperatures • High Avalanche Energy Capability • ESD JEDAC Rated HBM Clas |
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ON Semiconductor |
SiC MOSFET • Typ. RDS(on) = 60 mW @ VGS = 15 V • Typ. RDS(on) = 43 mW @ VGS = 18 V • Ultra Low Gate Charge (QG(tot) = 88 nC) • High Speed Switching with Low Capacitance (Coss = 115 pF) • 100% Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS C |
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ON Semiconductor |
Single N-Channel MOSFET Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses Lowers Switching Noise/EMI These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications Power Tools, Battery Operated |
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ON Semiconductor |
SiC MOSFET • Typ. RDS(on) = 28 mW • Ultra Low Gate Charge (typ. QG(tot) = 222 nC) • Low Effective Output Capacitance (typ. Coss = 200 pF) • 100% Avalanche Tested • RoHS Compliant Typical Applications • UPS • DC−DC Converter • Boost Converter MAXIMUM RATINGS ( |
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ON Semiconductor |
N-Channel Power MOSFET • Low QRR, Soft Recovery Body Diode • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications • Synchronous Rectificat |
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ON Semiconductor |
Power MOSFET • 700 V @ TJ = 150°C • Typ. RDS(on) = 70 mW • Ultra Low Gate Charge (Typ. Qg = 81 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 722 pF) • 100% Avalanche Tested • These Devices are Pb−Free and are RoHS Compliant Applications • Telecom / Se |
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ON Semiconductor |
SiC MOSFET • Typ. RDS(on) = 20 mW • Ultra Low Gate Charge (QG(tot) = 220 nC) • High Speed Switching with Low Capacitance (Coss = 258 pF) • 100% Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on seco |
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ON Semiconductor |
N-Channel MOSFET • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • Lowers Switching Noise/EMI • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications • Power Tools, Battery Operated |
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ON Semiconductor |
Power MOSFET |
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ON Semiconductor |
N-Channel MOSFET • 700 V @ TJ = 150°C • Typ. RDS(on) = 57 mW • Ultra Low Gate Charge (Typ. QG = 82 nC) • Low Effective Output Capacitance (Typ. COSS(eff.) = 724 pF) • 100% Avalanche Tested • Kelvin Source Configuration and Low Parasitic Source Inductance • MSL1 Quali |
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ON Semiconductor |
SiC MOSFET • Typ. RDS(on) = 19 mW @ VGS = 18 V Typ. RDS(on) = 25 mW @ VGS = 15 V • Ultra Low Gate Charge (QG(tot) = 164 nC) • Low Output Capacitance (Coss = 278 pF) • 100% Avalanche Tested • TJ = 175°C • RoHS Compliant Typical Applications • SMPS (Switching Mo |
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ON Semiconductor |
SiC MOSFET • Typ. RDS(on) = 33 mW @ VGS = 18 V Typ. RDS(on) = 45 mW @ VGS = 15 V • Ultra Low Gate Charge (QG(tot) = 105 nC) • Low Effective Output Capacitance (Coss = 162 pF) • 100% Avalanche Tested • TJ = 175°C • RoHS Compliant Typical Applications • SMPS (Swi |
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ON Semiconductor |
P-Channel Power MOSFET • Designed for Low RDS(on) • Withstands High Energy in Avalanche and Commutation Modes • AEC Q101 Qualified − NTBV5605 • These Devices are Pb−Free and are RoHS Compliant Applications • Power Supplies • PWM Motor Control • Converters • Power Managemen |
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ON Semiconductor |
Power MOSFET Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds Symbol VDSS VDGR VGS Value 60 60 "10 "20 15 8.0 45 48.4 0.32 −55 to +175 61 Adc Adc Apk Watts W/°C °C mJ Unit Vdc Vdc Vdc 4 4 1 TO−220AB CASE 221A STYLE 5 2 3 2 3 D2PAK CASE 418AA |
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ON Semiconductor |
Power MOSFET 60 AMPERES, 60 VOLTS RDS(on) = 16 mW N−Channel D • Pb−Free Packages are Available Typical Applications • • • • Power Supplies Converters Power Motor Controls Bridge Circuits G S 4 Value 60 60 "15 "20 60 42.3 180 150 1.0 2.4 −55 to 175 454 Adc Ap |
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ON Semiconductor |
Power MOSFET 1 A, L = 1.0 mH, RG = 25 W) Thermal Resistance − Junction−to−Case − Junction−to−Ambient Maximum Lead Temperature for Soldering Purposes, (1/8″ from case for 10 s) EAS 61 mJ RqJC RqJA TL °C/W 3.1 72.5 260 °C Maximum ratings are those values beyon |
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Desde 2024. D4U Semiconductor.
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