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NTBG025N065SC1 |
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| Part Number | NTBG025N065SC1 |
| Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
| Description | Silicon Carbide (SiC) MOSFET – EliteSiC, 19 mohm, 650 V, M2, D2PAK-7L NTBG025N065SC1 Features • Typ. RDS(on) = 19 mW @ VGS = 18 V Typ. RDS(on) = 25 mW @ VGS = 15 V • Ultra Low Gate Charge (QG(tot) = 164 nC) • Low Output Capacitance (Coss = 278 pF) • 100% Avalanche Tested • TJ = 175°C • RoHS Compliant Typical Applications • SMPS (Switching Mode Power Suppli. |
| Features |
• Typ. RDS(on) = 19 mW @ VGS = 18 V Typ. RDS(on) = 25 mW @ VGS = 15 V • Ultra Low Gate Charge (QG(tot) = 164 nC) • Low Output Capacitance (Coss = 278 pF) • 100% Avalanche Tested • TJ = 175°C • RoHS Compliant Typical Applications • SMPS (Switching Mode Power Supplies) • Solar Inverters • UPS (Uninterruptable Power Supplies) • Energy Storage MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Recommended Operation Values of Gate − Source Voltage VDSS 650 V VGS −8/+22 V TC < 175°C VGSop −5/+18 V Continuous Drain . |
| Datasheet |
 NTBG025N065SC1 Data Sheet
PDF 309.28KB |
| Distributor | Stock | Price | Buy |
|---|
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|---|---|---|---|---|
| 1 | NTBG020N090SC1 |
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| 2 | NTBG020N120SC1 |
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| 4 | NTBG014N120M3P |
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| 5 | NTBG040N120SC1 |
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| 6 | NTBG045N065SC1 |
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| 7 | NTBG060N090SC1 |
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| 8 | NTBG080N120SC1 |
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| 9 | NTBGS001N06C |
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Desde 2024. D4U Semiconductor.
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