No. | parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
|
|
ON Semiconductor |
P-Channel Logic Level Enhancement Mode Field Effect Transistor These logic level P-Channel enhancement mode power field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resis |
|
|
|
TriQuint Semiconductor |
GSM850/900 and DCS1800/PCS1900 Tx-Bandpass Filter • • • • • • • • Low insertion loss High suppression of 2nd,3rd , 4th harmonics High selectivity Balanced to single-ended operation GSM Input: 310 Ohm balanced PCN/PCS Input: 80 Ohm balanced 50 Ω single-ended output impedances. Integrated DC-biasing |
|
|
|
ON Semiconductor |
NDP11N50Z • • • • Low ON Resistance Low Gate Charge 100% Avalanche Tested These Devices are Pb−Free and are RoHS Compliant VDSS 500 V Rating Drain−to−Source Voltage Continuous Drain Current, RqJC Continuous Drain Current TA = 100°C, RqJC Pulsed Drain Current |
|
|
|
ON Semiconductor |
Power MOSFET • Low On-Resistance • Low Gate Charge • High Speed Switching • 100% Avalanche Tested • Pb-Free and RoHS Compliance Specifications Absolute Maximum Ratings at Ta = 25°C VDSS 100V RDS(on) Max 7.2 mΩ@15V 8.7 mΩ@10V ID Max 100A Electrical Connection |
|
|
|
ON Semiconductor |
N-Channel Power MOSFET • • • • Low ON Resistance Low Gate Charge 100% Avalanche Tested These Devices are Pb−Free and RoHS Compliant http://onsemi.com VDSS 620 V RDS(ON) (TYP) @ 2 A 1.8 Ω ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Parameter Drain−to−Sou |
|
|
|
ON Semiconductor |
N-Channel Power MOSFET • • • • Low ON Resistance Low Gate Charge 100% Avalanche Tested These Devices are Pb−Free and are RoHS Compliant VDSS 500 V Rating Drain−to−Source Voltage Continuous Drain Current, RqJC Continuous Drain Current TA = 100°C, RqJC Pulsed Drain Current |
|
|
|
ON Semiconductor |
N-Channel Power MOSFET • • • • Low ON Resistance Low Gate Charge 100% Avalanche Tested These Devices are Pb−Free and are RoHS Compliant VDSS 500 V http://onsemi.com RDS(ON) (TYP) @ 3.6 A 0.69 W ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain−to |
|
|
|
ON Semiconductor |
N-Channel FET 48A, 60V. RDS(ON) = 0.025Ω @ VGS = 5V. These logic level N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high density process has been especia |
|
|
|
National Semiconductor |
(NDP505 / NDP5060 N-Channel Enhancement Mode Power FET |
|
|
|
National Semiconductor |
(NDP505 / NDP5060 N-Channel Enhancement Mode Power FET |
|
|
|
National Semiconductor |
(NDP505 / NDP5060 N-Channel Enhancement Mode Power FET |
|
|
|
National Semiconductor |
(NDP505 / NDP5060 N-Channel Enhancement Mode Power FET |
|
|
|
ON Semiconductor |
N-Channel Power MOSFET • • • • • • • • • • Low ON Resistance Low Gate Charge Zener Diode−protected Gate 100% Avalanche Tested ROHS Compliant This is a Pb−Free Device Adapter (Notebook, Printer, Gaming) LCD Panel Power ATX Power Supplies Lighting Ballasts Rating Drain−to− |
|
|
|
ON Semiconductor |
Single N-Channel TO-220FP MOSFET • • • • Low ON Resistance Low Gate Charge 100% Avalanche Tested These Devices are Pb−Free and are RoHS Compliant VDSS 600 V http://onsemi.com RDS(ON) (TYP) @ 3 A 0.98 Ω Applications • Adapter (Notebook, Printer, Gaming) • LCD Panel Power • Light |
|
|
|
ON Semiconductor |
N-Channel Power MOSFET • • • • • • • • • • Low ON Resistance Low Gate Charge Zener Diode−protected Gate 100% Avalanche Tested ROHS Compliant This is a Pb−Free Device Adapter (Notebook, Printer, Gaming) LCD Panel Power ATX Power Supplies Lighting Ballasts Rating Drain−to− |
|
|
|
ON Semiconductor |
N-Channel Power MOSFET www.DataSheet4U.com • • • • Low ON Resistance Low Gate Charge 100% Avalanche Tested These Devices are Pb−Free and are RoHS Compliant http://onsemi.com VDSS 500 V RDS(on) (TYP) @ 2.2 A 1.25 W ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise n |
|
|
|
ON Semiconductor |
N-Channel Power MOSFET |
|
|
|
ON Semiconductor |
N-Channel Power MOSFET • • • • Low ON Resistance Low Gate Charge 100% Avalanche Tested These Devices are Pb−Free and are RoHS Compliant http://onsemi.com VDSS 600 V RDS(on) (TYP) @ 1.2 A 3.3 W ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain−to− |
|
|
|
ON Semiconductor |
N-Channel Power MOSFET • • • • Low ON Resistance Low Gate Charge 100% Avalanche Tested These Devices are Pb−Free and RoHS Compliant VDSS 620 V Rating Drain−to−Source Voltage Continuous Drain Current RqJC Continuous Drain Current RqJC, TA = 100°C Pulsed Drain Current, VGS |
|
|
|
ON Semiconductor |
N-Channel Power MOSFET • • • • • Low ON Resistance Low Gate Charge Zener Diode−protected Gate 100% Avalanche Tested These Devices are Pb−Free and RoHS Compliant http://onsemi.com VDSS 620 V RDS(ON) (TYP) @ 5 A 0.65 Ω ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise |
|