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NDP6020P |
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| Part Number | NDP6020P |
| Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
| Description | Features These logic level P-Channel enhancement mode power field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and. |
| Features | These logic level P-Channel enhancement mode power field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transi. |
| Datasheet |
 NDP6020P Data Sheet
PDF 180.24KB |
| Distributor | Stock | Price | Buy |
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NDP6020P |
| Part Number | NDP6020P |
| Manufacturer | Fairchild |
| Title | P-Channel Logic Level Enhancement Mode Field Effect Transistor |
| Description | These logic level P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withsta. |
| Features | -24 A, -20 V. RDS(ON) = 0.05 Ω @ VGS= -4.5 V. RDS(ON) = 0.07Ω @ VGS= -2.7 V. RDS(ON) = 0.075 Ω @ VGS= -2.5 V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design for extremely low RDS(ON). TO-220 and TO-263 . |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | NDP6020 |
Fairchild |
N-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
| 2 | NDP6030 |
Fairchild |
N-Channel Enhancement Mode Field Effect Transistor |
|
| 3 | NDP6030 |
Fairchild |
N-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
| 4 | NDP6030 |
Fairchild |
P-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
| 5 | NDP6030L |
Fairchild |
N-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
| 6 | NDP6030PL |
Fairchild |
P-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
| 7 | NDP603AL |
Fairchild |
N-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
| 8 | NDP6050 |
Fairchild |
N-Channel Enhancement Mode Field Effect Transistor |
|
| 9 | NDP6050L |
Fairchild |
N-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
| 10 | NDP6051 |
Fairchild |
N-Channel Enhancement Mode Field Effect Transistor |
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Desde 2024. D4U Semiconductor.
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