Busque con el número de pieza junto con el fabricante o la descripción
NDP6030 |
Click to view a larger image
| Part Number | NDP6030 |
| Manufacturer | Fairchild |
| Description | These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as DC/DC. |
| Features | 46 A, 30 V. RDS(ON) = 0.018 @ VGS=10 V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design for extremely low RDS(ON). TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications ________________________________________________________________________________ D G S Absolute Maximum Ratings Symbol VDSS VDGR VGSS ID Parameter Drain-Source Voltage T C = 25°C unless otherwise . |
| Datasheet |
 NDP6030 Data Sheet
PDF 56.18KB |
| Distributor | Stock | Price | Buy |
|---|
NDP6030 |
| Part Number | NDP6030 |
| Manufacturer | Fairchild |
| Title | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| Description | These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance and provide superior switching performance. These devices are pa. |
| Features | 46 A, 30 V. RDS(ON) = 0.018 @ VGS=10 V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design for extremely low RDS(ON). TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications . |
NDP6030 |
| Part Number | NDP6030 |
| Manufacturer | Fairchild |
| Title | P-Channel Logic Level Enhancement Mode Field Effect Transistor |
| Description | These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance and provide superior switching performance. These devices are pa. |
| Features | 46 A, 30 V. RDS(ON) = 0.018 @ VGS=10 V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design for extremely low RDS(ON). TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications . |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | NDP6030L |
Fairchild |
N-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
| 2 | NDP6030PL |
Fairchild |
P-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
| 3 | NDP603AL |
Fairchild |
N-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
| 4 | NDP6020 |
Fairchild |
N-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
| 5 | NDP6020P |
ON Semiconductor |
P-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
| 6 | NDP6020P |
Fairchild |
P-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
| 7 | NDP6050 |
Fairchild |
N-Channel Enhancement Mode Field Effect Transistor |
|
| 8 | NDP6050L |
Fairchild |
N-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
| 9 | NDP6051 |
Fairchild |
N-Channel Enhancement Mode Field Effect Transistor |
|
| 10 | NDP605A |
National |
N-Channel Enhancement Mode Power Fleid Effect Transistor |
|
Desde 2024. D4U Semiconductor.
|