ON Semiconductor NBR Hoja de datos

No.	parte #	Fabricante	Descripción
1	MRF9030NBR1	Freescale Semiconductor	RF Power Field Effect Transistors
2	ZNBR6001	Zetex Semiconductors	FET BIAS CONTROLLER APPLICATIONS • • • • • • • • • VCC of 3-6V for improved efficiency Provides bias for GaAs and HEMT FETs Drives up to four or six FETs Dynamic FET protection Drain current set by external resistor Regulated negative rail generator requires only 2 e
3	MW6IC2015GNBR1	Freescale Semiconductor	RF LDMOS Wideband Integrated Power Amplifiers • Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source Scattering Parameters • On - Chip Matching (50 Ohm Input, DC Blocked, >5 Ohm Output) • Integrated Quiescent Current Temperature Compensation with Enable/Disa
4	ZNBR4000	Zetex Semiconductors	FET BIAS CONTROLLER APPLICATIONS • • • • • • • • • VCC of 3-6V for improved efficiency Provides bias for GaAs and HEMT FETs Drives up to four or six FETs Dynamic FET protection Drain current set by external resistor Regulated negative rail generator requires only 2 e
5	ZNBR4001	Zetex Semiconductors	FET BIAS CONTROLLER APPLICATIONS • • • • • • • • • VCC of 3-6V for improved efficiency Provides bias for GaAs and HEMT FETs Drives up to four or six FETs Dynamic FET protection Drain current set by external resistor Regulated negative rail generator requires only 2 e
6	ZNBR6001Q20	Zetex Semiconductors	FET BIAS CONTROLLER APPLICATIONS • • • • • • • • • VCC of 3-6V for improved efficiency Provides bias for GaAs and HEMT FETs Drives up to four or six FETs Dynamic FET protection Drain current set by external resistor Regulated negative rail generator requires only 2 e
7	MRF6S19060NBR1	Freescale Semiconductor	RF Power Field Effect Transistors • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched for Ease of Use • Qualified Up to a Maximum of 32 VDD Operation • Integrated ESD Protection • Designed for Lower Memory Effects and Wide Instantaneous Ban
8	MW5IC970NBR1	Freescale Semiconductor	RF LDMOS Wideband 2-Stage Power Amplifiers • Characterized with Series Equivalent Large - Signal Impedance Parameters • Integrated Quiescent Current Temperature Compensation with Enable/Disable Function • On - Chip Current Mirror gm Reference FET for Self Biasing Application (1) • Integrated
9	MRF9060NBR1	Freescale Semiconductor	RF Power Field Effect Transistors • Excellent Thermal Stability • Characterized with Series Equivalent Large - Signal Impedance Parameters • Integrated ESD Protection • 200_C Capable Plastic Package • N Suffix Indicates Lead - Free Terminations. RoHS Compliant. • TO - 270 - 2 Availab
10	MRF6S18100NBR1	Freescale Semiconductor	RF Power Field Effect Transistors • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched for Ease of Use • Qualified Up to a Maximum of 32 VDD Operation • Integrated ESD Protection • Designed for Lower Memory Effects and Wide Instantaneous Ban
11	MW6IC2420NBR1	Freescale Semiconductor	RF LDMOS Integrated Power Amplifier • Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source Scattering Parameters • On - Chip Matching (50 Ohm Input, DC Blocked, >3 Ohm Output) • Integrated Quiescent Current Temperature Compensation with Enable/Disa
12	MRFE6S9125NBR1	Freescale Semiconductor	N-Channel Enhancement-Mode Lateral MOSFETs • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched for Ease of Use • Integrated ESD Protection • 225°C Capable Plastic Package • RoHS Compliant • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch
13	ZNBR4000Q16	Zetex Semiconductors	FET BIAS CONTROLLER
14	ZNBR6000	Zetex Semiconductors	FET BIAS CONTROLLER APPLICATIONS • • • • • • • • • VCC of 3-6V for improved efficiency Provides bias for GaAs and HEMT FETs Drives up to four or six FETs Dynamic FET protection Drain current set by external resistor Regulated negative rail generator requires only 2 e
15	ZNBR6000Q20	Zetex Semiconductors	FET BIAS CONTROLLER APPLICATIONS • • • • • • • • • VCC of 3-6V for improved efficiency Provides bias for GaAs and HEMT FETs Drives up to four or six FETs Dynamic FET protection Drain current set by external resistor Regulated negative rail generator requires only 2 e
16	MRF6S9125NBR1	Freescale Semiconductor	RF Power Field Effect Transistors
17	MRF7S19100NBR1	Motorola Semiconductor	RF Power Field Effect Transistors • 100% PAR Tested for Guaranteed Output Power Capability • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched for Ease of Use • Integrated ESD Protection • Designed for Digital Predistortion Error Correction
18	MRF6S21100NBR1	Freescale Semiconductor	RF Power Field Effect Transistors • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched for Ease of Use • Qualified Up to a Maximum of 32 VDD Operation • Integrated ESD Protection • Designed for Lower Memory Effects and Wide Instantaneous Ban
19	MW5IC2030GNBR1	Freescale Semiconductor	RF LDMOS Wideband Integrated Power Amplifiers 2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain — 24 dB ACPR @ 885 kHz Offset — - 63 dBc in 30 kHz Channel Bandwidth • Capable of Handling 10:1 VSWR, @ 27 Vdc, 1990 MHz, 30 Watts CW Output Power • Stable into a 3:1 VSWR. All Spurs Belo
20	MW6IC2240GNBR1	Freescale Semiconductor	RF LDMOS Wideband Integrated Power Amplifiers 1% Probability on CCDF. Power Gain — 29 dB IM3 @ 10 MHz Offset — -59 dBc in 3.84 MHz Bandwidth ACPR @ 5 MHz Offset — -62 dBc in 3.84 MHz Bandwidth • Capable of Handling 3:1 VSWR, @ 28 Vdc, 2170 MHz, 20 Watts CW Output Power • Stable into a 3:1 VSWR.