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MRF6S21100NBR1 |
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| Part Number | MRF6S21100NBR1 |
| Manufacturer | Freescale Semiconductor |
| Description | Part Number 25008051107Y0 T491D106K035AT C1825C103J1GAC ATC600B5R1BT250XT GRM55DR61H106KA88L ATC600B100BT250XT ATC600B1R1BT250XT AT600B5R1BT250XT ATC600B8R2BT250XT CRCW12061000FKTA CRCW12061001FKTA CR... |
| Features |
• Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched for Ease of Use • Qualified Up to a Maximum of 32 VDD Operation • Integrated ESD Protection • Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications • 200°C Capable Plastic Package • N Suffix Indicates Lead - Free Terminations. RoHS Compliant. • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. MRF6S21100NR1 MRF6S21100NBR1 2110 - 2170 MHz, 23 W AVG., 28 V 2 x W - CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 1486 - 03, STYLE 1 TO - 270 WB - 4 PLASTIC MRF6S... |
| Document |
 MRF6S21100NBR1 Data Sheet
PDF 882.80KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | MRF6S21100NR1 |
Freescale Semiconductor |
RF Power Field Effect Transistors |
|
| 2 | MRF6S21100HR3 |
Freescale Semiconductor |
RF Power Field Effect Transistors |
|
| 3 | MRF6S21100HSR3 |
Freescale Semiconductor |
RF Power Field Effect Transistors |
|
| 4 | MRF6S21140HR3 |
NXP |
RF Power FET |
|
| 5 | MRF6S21140HSR3 |
NXP |
RF Power FET |
|
| 6 | MRF6S21050LR3 |
Freescale Semiconductor |
RF Power Field Effect Transistors |
|
Desde 2024. D4U Semiconductor.
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