| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Inchange Semiconductor |
Silicon NPN Power Transistor sc Silicon NPN Power Transistor MJB44H11 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 VCE(sat) VBE(sat) ICEO Collector-Emitter Saturation |
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ON Semiconductor |
PNP Transistor • Low Collector−Emitter Saturation Voltage − VCE(sat) = 1.0 V (Max) @ 8.0 A • Fast Switching Speeds • Complementary Pairs Simplifies Designs • Epoxy Meets UL 94 V−0 @ 0.125 in • ESD Ratings: Human Body Model, 3B > 8000 V Machine Model, C > 400 V • NJ |
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Inchange Semiconductor |
Silicon NPN Power Transistor itter Breakdown Voltage IC= 30mA; IB= 0 VCE(sat)* VBE(on)* ICEO Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current IC=6A; IB= 600mA IC= 6A; VCE=4V VCE= 60V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hF |
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Inchange Semiconductor |
Silicon PNP Power Transistor )CEO Collector-Emitter Breakdown Voltage IC=- 30mA; IB= 0 VCE(sat) VBE(sat) ICEO Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current IC=-8A; IB=- 400mA IC=-8A; IB= -800mA VCE= -80V; IE= 0 IEBO Emitter Cu |
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ON Semiconductor |
Complementary Silicon Plastic Power Transistors • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Electrically the Same as TIP41 and T1P42 Series • NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified |
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ON Semiconductor |
NPN Silicon Power Darlington Transistors http://onsemi.com • These Devices are Pb−Free and are RoHS Compliant Applications • • • • • Small Engine Ignition Switching Regulators Inverters Solenoid and Relay Drivers Motor Controls POWER DARLINGTON TRANSISTORS 8 AMPERES, 400 VOLTS 100 WATTS |
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ON Semiconductor |
Complementary Silicon Plastic Power Transistors • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Electrically the Same as TIP41 and T1P42 Series • NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified |
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ON Semiconductor |
Complementary Silicon Plastic Power Transistors • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Electrically the Same as TIP41 and T1P42 Series • NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified |
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ON Semiconductor |
NPN Transistor • Low Collector−Emitter Saturation Voltage − VCE(sat) = 1.0 V (Max) @ 8.0 A • Fast Switching Speeds • Complementary Pairs Simplifies Designs • Epoxy Meets UL 94 V−0 @ 0.125 in • ESD Ratings: Human Body Model, 3B > 8000 V Machine Model, C > 400 V • NJ |
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ON Semiconductor |
NPN Transistor http://onsemi.com SILICON POWER TRANSISTORS 10 AMPERES, 80 VOLTS, 50 WATTS MARKING DIAGRAM • Low Collector−Emitter Saturation Voltage − • • • • • • VCE(sat) = 1.0 V (Max) @ 8.0 A Fast Switching Speeds Complementary Pairs Simplifies Designs Epoxy M |
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ON Semiconductor |
PNP Transistor http://onsemi.com SILICON POWER TRANSISTORS 10 AMPERES, 80 VOLTS, 50 WATTS MARKING DIAGRAM • Low Collector−Emitter Saturation Voltage − • • • • • • VCE(sat) = 1.0 V (Max) @ 8.0 A Fast Switching Speeds Complementary Pairs Simplifies Designs Epoxy M |
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ON Semiconductor |
Complementary Silicon Plastic Power Transistors • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Electrically the Same as TIP41 and T1P42 Series • NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified |
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Inchange Semiconductor |
Silicon PNP Power Transistor tor-Emitter Breakdown Voltage IC=- 30mA; IB= 0 VCE(sat)* VBE(on)* ICEO Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current IC=-6A; IB= -600mA IC=- 6A; VCE=-4V VCE=-60V; IE= 0 IEBO Emitter Cutoff Current VEB=-5V |
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Desde 2024. D4U Semiconductor.
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