MJB44H11 |
Part Number | MJB44H11 |
Manufacturer | Inchange Semiconductor |
Description | ·Low Collector-Emitter saturation voltage ·Pb-free package are available ·Fast switching speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Genera... |
Features |
sc Silicon NPN Power Transistor
MJB44H11
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0
VCE(sat) VBE(sat)
ICEO
Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current
IC=8A; IB= 0.4A IC=8A; IB= 0.4A VCE= 80V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE1
DC Current Gain
hFE2
DC Current Gain
IC= 2A; VCE= 1V IC= 4A; VCE= 1V
fT
Current-Gain—Bandwidth Product
IC= 0.5A; VCE= 10V
MIN TYP MAX UNIT
80
V
1.0
V
1.5
V
10
uA
50
... |
Document |
MJB44H11 Data Sheet
PDF 214.41KB |
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