ON Semiconductor LC1 Hoja de datos

No.	parte #	Fabricante	Descripción
1	SLC1012C	Fairchild Semiconductor	LED Backlight Driving Boost Switch  Single-Channel Boost LED Switch  Internal Power MOSFET for PWM Dimming: RDS(on) = 3.4 Ω at VGS=10 V, BVDSS=400 V  Current Mode PWM Control  Internal Programmable Slope Compensation  Wide Supply Voltage Range: 10 V to 35 V  LED Current Regulati
2	CLC109	National Semiconductor	Low-Power/ Wideband/ Closed-Loop Buffer s s s s s s High small-signal bandwidth (270MHz) Low supply current (3.5mA @ ±5V) Low output impedance (2.8Ω) 350V/µs slew rate Single supply operation (0 to 3V supply min.) Evaluation boards and Spice models Video switch buffers Test point drivers
3	CAT64LC10	Catalyst Semiconductor	1K/2K/4K-Bit SPI Serial EEPROM s SPI bus compatible s Low power CMOS technology s 2.5V to 6.0V operation s Self-timed write cycle with auto-clear s Hardware reset pin s Hardware and software write protection H GEN FR ALO EE LE A D F R E ETM s Commercial, industrial and autom
4	CY8CPLC10	Cypress Semiconductor	Powerline Communication ■ Integrated Powerline Modem PHY ■ 2400 bps Frequency Shift Keying Modulation ■ Powerline Optimized Network Protocol ■ Integrates Data Link, Transport, and Network Layers ■ Supports Bidirectional Half-Duplex Communication ■ 8-bit CRC Error Detection
5	ALC1150	Realtek Semiconductor	7.1+2 CHANNEL HD AUDIO CODEC .........................................................................................................................................................................2 2.1. HARDWARE FEATURES ........................................................
6	16R6L	Cypress Semiconductor	PALC16R6L
7	ALC1150-CG	Realtek Semiconductor	7.1+2 CHANNEL HD AUDIO CODEC .........................................................................................................................................................................2 2.1. HARDWARE FEATURES ........................................................
8	AS4LC1M16E5	Alliance Semiconductor	3V 1M x 16 CMOS DRAM • Organization: 1,048,576 words × 16 bits • High speed - 50/60 ns RAS access time - 20/25 ns hyper page cycle time - 12/15 ns CAS access time • Low power consumption - Active: 500 mW max (-60) - Standby: 3.6 mW max, CMOS DQ • Extended data out • 1024
9	CLC103	National Semiconductor	Fast Settling/ High Current Wideband Op Amp s s s s s 80MHz full-power bandwidth (20Vpp, 100Ω) 200mA output current 0.4% settling in 10ns 600V/µs slew rate 4ns rise and fall times (20V) Coaxial line driving DAC current to voltage amplifier Flash A to D Baseband and video communications Radar
10	CLC115	National Semiconductor	Closed-Loop Monolithic Buffer s Closed-loop, quad buffer s 700MHz small-signal bandwidth s 270V/µs slew rate s 0.08%/0.04° differential gain/phase s 60dB channel isolation (10MHz) s -62dBc 2nd and 3rd harmonics at 20MHz s 60mA current output per channel Applications s Multi-chann
11	JLC1562B	ON Semiconductor	I2C Bus I/O Expander http://onsemi.com MARKING DIAGRAMS 16 PDIP−16 N SUFFIX CASE 648 1 16 EIAJ−16 F SUFFIX CASE 966 1 A WL, L YY, Y WW, W = Assembly Location = Wafer Lot = Year = Work Week JLC1562B ALYW • • • • • • • • • Pb−Free Packages are Available* Low Power Dissi
12	IN24LC16	IK Semiconductor	16K 2.5V CMOS Serial EEPROMs • Single supply with operation down to 2.5V • Low power CMOS technology - 1 mA active current typical - 10 µA standby current typical at 5.5V - 5 µA standby current typical at 3.0V • Organized as 8 blocks of 256 bytes (8 x 256 x 8) • 2-wire serial in
13	AS4LC1M16S0	Alliance Semiconductor	(AS4LCxMxxSx) 3.3V 2M X 8/1M X 16 CMOS synchronous DRAM • Organization - 1,048,576 words × 8 bits × 2 banks (2M × 8) 11 row, 9 column address - 524,288 words × 16 bits × 2 banks (1M × 16) 11 row, 8 column address AS4LC2M8S1 AS4LC2M8S0 AS4LC1M16S1 AS4LC1M16S0 • All signals referenced to positive edge of
14	AS4LC1M16S1	Alliance Semiconductor	(AS4LCxMxxSx) 3.3V 2M X 8/1M X 16 CMOS synchronous DRAM • Organization - 1,048,576 words × 8 bits × 2 banks (2M × 8) 11 row, 9 column address - 524,288 words × 16 bits × 2 banks (1M × 16) 11 row, 8 column address AS4LC2M8S1 AS4LC2M8S0 AS4LC1M16S1 AS4LC1M16S0 • All signals referenced to positive edge of
15	ALC100P	Realtek Semiconductor	Valued AC97 Audio Codec : l Single chip audio CODEC with high S/N ratio. l 16-bit ADC and DAC resolution. l Compliant with AC’97 2.1 specification l Supports AMR and CNR applications. l 16-bit stereo full-duplex CODEC with fixed 48k sampling rate. l 4 analog line-level ster
16	AS8FLC1M32	Austin Semiconductor	3.0Volt Boot Block FLASH Array • • • • • • • • • • • • • • 32Mb device, total density, organized as 1M x 32 Bottom Boot Block (Sector) Architecture Operation with single 3.0V Supply Available in multiple Access time variations Individual byte control via individual byte selects (C
17	AS58LC1001	Austin Semiconductor	128K x 8 EEPROM Radiation Tolerant High speed: 250ns and 300ns Data Retention: 10 Years z Low power dissipation, active current (20mW/MHz (TYP)), standby current (100μW(MAX)) z Single +3.3V +.3V power supply z Data Polling and Ready/Busy Signals z Erase/Write Endurance (10,000 cycles
18	LC1707PLF	ON Semiconductor	FM multiple tuner and Car Audio System Specifications: Maximum Ratings at Ta = 25C Parameter Supply voltage Maximum input voltage Maximum output voltage Power dissipation Operating ambient Storage temperature Symbol VDD max VDD H VDD L Pd max Topr Tstg Condition
19	HT24LC16	Holtek Semiconductor Inc	CMOS 16K 2-Wire Serial EEPROM · Operating voltage: 2.2V~5.5V · Low power consumption - Operation: 5mA max. - Standby: 5mA max. · Internal organization: 2048´8 · 2-wire Serial Interface · Write cycle time: 5ms max. · Automatic erase-before-write operation · Partial page write allo
20	IN24LC16B	IK Semiconductor	16K 2.5V CMOS Serial EEPROMs Sh IN24LC16B • Single supply with operation down to 2.5V • Low power CMOS technology - 1 mA active current typical - 10 µA standby current typical at 5.5V - 5 µA standby current typical at 3.0V • Organized as 8 blocks of 256 bytes (8 x 256 x 8) •