| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Taiwan Semiconductor |
Surface Mount Transient Voltage Suppressor ● AEC-Q101 qualified ● Ideal for automated placement ● Glass passivated chip junction ● Excellent clamping capability ● Meets ISO 7637-2 (Pulse 1/2a/2b/3a/3b) ● Fast response time: Typically less than 1.0ps ● Moisture sensitivity level: level 1, per |
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National Semiconductor |
N-Channel JFET mmon-Source Forward Transconductance, (Note 2) Common-Source Output Transconductance Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance Common-Source Output Capacitance CONDITIONS V G S=-15V, V DS «0, (Note 1) V DS = 10V, |
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Toshiba Semiconductor |
N-Channel IGBT Capacitance Rise Time Switching Time Turn−On Time Fall Time Turn−Off Time Peak Forward Voltage Reverse Recovery Time Thermal Resistance (IGBT) Thermal Resistance (Diode) IGES VGE = ±20V, VCE = 0 ― ICES VCE = 600V, VGE = 0 ― VGE (OFF) I |
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Inchange Semiconductor |
Silicon NPN Power Transistor L CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC=50mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.6A VBE(sat) Base-Emitter Saturation Voltag |
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Excel Semiconductor |
Zener diode 1. Low leakage 2. High reliability Applications Voltage stabilization Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter Power dissipation Junction temperature Storage temperature range Test Conditions RthJA≦300K/W |
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Inchange Semiconductor |
Silicon NPN Power Transistor PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC=50mA ; IB=0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 3.3A VBE(on) Base-Emitter On Volta |
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Comset Semiconductors |
(MJ3000 / MJ3001) COMPLEMENTARY POWER DARLINGTONS heet4U.net/ PNP MJ3000 – MJ3001 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol BVCEO Ratings Collector-Emitter Breakdown Voltage (*) Collector Cutoff Current Test Condition(s) IC=100mA IB=0 VCE=30 V IB=0 VCE=40 V IB=0 VBE=5.0 V |
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Central Semiconductor |
Silicon complementary trasistors |
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Taiwan Semiconductor |
Surface Mount Transient Voltage Suppressor For surface mounted application Low profile package Built-in strain relief Glass passivated junction Excellent clamping capability Fast response time: Typically less than 1.0ps from 0 volt to BV min. Typical IR less than 1μA above 10V High temperatur |
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Taiwan Semiconductor |
Transient Voltage Suppressor ● AEC-Q101 qualified ● Low profile package ● Ideal for automated placement ● Glass passivated junction ● Excellent clamping capability ● Fast response time: Typically less than 1.0ps ● Meets ISO 7637-2 (Pulse 1/2a/2b/3a/3b) ● Moisture sensitivity lev |
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First Semiconductor |
SMD Transient Voltage Suppressor • 3000W peak pulse power capability with a 10/1000 us waveform, repetition rate(duty cycle): 0.01%. • Excellent clamping capability. • Low incremental surge resistance. • Fast response time from 0V to VBR, typically less than 1 ps for uni-directional |
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Toshiba Semiconductor |
Silicon N-Channel IGBT icantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Pr |
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Diotec Semiconductor |
SMD Transient Voltage Suppressor Diodes Besonderheiten Uni- and Bidirectional versions Uni- und Bidirektionale Versionen Peak pulse power of 400 W 400 W Impuls-Verlustleistung (10/1000 µs waveform) (10/1000 µs Strom-Impuls) Very fast response time Sehr schnelle Ansprechzeit Furth |
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Fairchild Semiconductor |
N-Channel RF Amplifier |
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Fairchild Semiconductor |
N-Channel RF Amplifier • This device is designed for VHF/UHF amplifier, oscillator and mixer applications. • As a common gate amplifier, 16 dB at 100 MHz and 12 dB at 450 MHz can be realized. • Sourced from Process 92. • Source & Drain are interchangeable. J309 J310 MMBF |
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Taiwan Semiconductor |
Surface Mount Transient Voltage Suppressor ● Ideal for automated placement ● Glass passivated junction ● Excellent clamping capability ● Fast response time: Typically less than 1.0ps ● Typical IR less than 1μA above 10V ● Meets ISO 7637-2 (Pulse 1/2a/2b/3a/3b) ● Moisture sensitivity level: le |
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Taiwan Semiconductor |
Hermetically Sealed Glass Zener Diodes - Zener voltage range : 2.0V to 39V - DO-34 package (JEDEC DO-204) - Through-hole device type mounting - Hermetically sealed glass - Compression bonded construction - All external surfaces are corrosion resistant and leads are readily solderable - Ro |
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Taiwan Semiconductor |
16V - 100V Surface Mount Transient Voltage Suppressor ● 5000 watts peak pulse power capability at 10/1000μs waveform ● Ideal for automated placement ● Photo glass passivated junction ● Excellent clamping capability ● Fast response time: Typically less than 1.0ps ● Moisture sensitivity level: level 1, pe |
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First Semiconductor |
SMD Transient Voltage Suppressor • 3000W peak pulse power capability with a 10/1000 us waveform, repetition rate(duty cycle): 0.01%. • Excellent clamping capability. • Low incremental surge resistance. • Fast response time from 0V to VBR, typically less than 1 ps for uni-directional |
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Comset Semiconductors |
NPN Transistor heet4U.net/ PNP MJ3000 – MJ3001 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol BVCEO Ratings Collector-Emitter Breakdown Voltage (*) Collector Cutoff Current Test Condition(s) IC=100mA IB=0 VCE=30 V IB=0 VCE=40 V IB=0 VBE=5.0 V |
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Desde 2024. D4U Semiconductor.
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